红外与毫米波学报, 2013, 32 (3): 193, 网络出版: 2013-06-25
有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs
High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm
基本信息
| DOI: | 10.3724/sp.j.1010.2013.00193 |
| 中图分类号: | TN385 |
| 栏目: | |
| 项目基金: | Supported by the National Basic Research Program of China (2010CB327502) |
| 收稿日期: | 2012-03-01 |
| 修改稿日期: | 2012-04-26 |
| 网络出版日期: | 2013-06-25 |
| 通讯作者: | |
| 备注: | -- |
钟英辉, 王显泰, 苏永波, 曹玉雄, 张玉明, 刘新宇, 金智. 有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs[J]. 红外与毫米波学报, 2013, 32(3): 193. ZHONG Ying-Hui, WANG Xian-Tai, SU Yong-Bo, CAO Yu-Xiong, ZHANG Yu-Ming, LIU Xin-Yu, JIN Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 193.
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