[1] Lai R, Mei X B, Deal W R, et al. Sub 50 nm InP HEMT device with fmax greater than 1 THz: IEEE International Electron Devices Meeting IEDM, 2007[C]. Washington, DC, 2007:609611.

[2] Kim D-H, del Alamo J A. 30-nm InAs PHEMTs With fT=644 GHz and fmax= 681 GHz[J]. IEEE Electron Device Letters, 2010, 31(8):806808.

[3] Kim D-H, del Alamo J A. 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz[J]. IEEE Electron Device Letters, 2008, 29(8):830833.

[4] Zimmer T, Ouro Bodi D, Dumas J M, et al. Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for SPICE simulation[J]. Solid State Electron, 1992, 35(10):15431548.

[5] Suemitsu T, Enoki T, Sano N, et al. An analysis of the kink phenomena in InAlAs/InGaAs HEMTs using two dimensional device simulation[J]. IEEE Transactions On Electron Devices, 1998, 45(12):23902399.

[6] Grundbacher R, Lai R, Barsky M, et al. 0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band simulation: 14th Indium phosphide and related materials conference IPRM, 2002[C]. Stockholm, Sweden, 2002:455458.