有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs
钟英辉, 王显泰, 苏永波, 曹玉雄, 张玉明, 刘新宇, 金智. 有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs[J]. 红外与毫米波学报, 2013, 32(3): 193.
ZHONG Ying-Hui, WANG Xian-Tai, SU Yong-Bo, CAO Yu-Xiong, ZHANG Yu-Ming, LIU Xin-Yu, JIN Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 193.
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钟英辉, 王显泰, 苏永波, 曹玉雄, 张玉明, 刘新宇, 金智. 有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs[J]. 红外与毫米波学报, 2013, 32(3): 193. ZHONG Ying-Hui, WANG Xian-Tai, SU Yong-Bo, CAO Yu-Xiong, ZHANG Yu-Ming, LIU Xin-Yu, JIN Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 193.
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