量子电子学报, 2014, 31 (1): 107, 网络出版: 2014-02-26
单量子阱InGaN/GaN势垒高度与LED光电性能关系研究
Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance
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张大庆, 李国斌, 陈长水. 单量子阱InGaN/GaN势垒高度与LED光电性能关系研究[J]. 量子电子学报, 2014, 31(1): 107. ZHANG Da-qing, LI Guo-bin, CHEN Chang-shui. Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance[J]. Chinese Journal of Quantum Electronics, 2014, 31(1): 107.
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