单量子阱InGaN/GaN势垒高度与LED光电性能关系研究
[1] Kioupakis E, Rinke P, et al. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes [J]. Appl. Phys. Lett., 2011, 98(16): 161107-1-3.
[2] Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence [J]. Appl. Phys. Lett., 2007, 91(14): 141101-1-3.
[3] Delaney K T, Rinke P, et al. Auger recombination rates in nitrides from first principles [J]. Appl. Phys. Lett., 2009, 94(19): 191109-1-3.
[4] Galler B, Drechsel P, Monnard R, et al. Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates [J]. Appl. Phys. Lett., 2012, 101(13): 131111-1-4.
[5] Mao A, Jaehee C, et al. Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers [J]. Electr. Mater. Lett., 2012, 8(1): 1-4.
[6] Lang J R, Young N G, Farrell R M, et al. Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells [J]. Appl. Phys. Lett., 2012, 101(18): 181105-1-4.
[7] Liu M L, Ye Z Q, Lei M S. Efficiency droop in blue InGaN/GaN single-quantum-well light-emitting diodes on the Si substrate [J]. Semiconductor Science and Technology, 2012, 27(4): 045010.
[8] Piprek J, et al. Sensitivity analysis of electron leakage in III-nitride light-emitting diodes [J]. Appl. Phys. Lett., 2013, 102(13): 131103-1-4.
[9] Davies M J, Badcock T J, Dawson P, et al. High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop [J]. Appl. Phys. Lett., 2013, 102(2): 022106-1-3.
[10] Wang C H, Ke C C, Lee C Y, et al. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer [J]. Appl. Phys. Lett., 2010, 97(26): 261103-1-3.
[11] Hwang S Y, Ha W J, Kim J K, et al. Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop [J]. Appl. Phys. Lett., 2011, 99(18): 181115-1-3.
[12] Wang C K, Chiang T H, Chen K Y, et al. Investigating the effect of piezoelectric polarization on GaN-based LEDs with different quantum barrier thickness [J]. Journal of Display Technology, 2013, 9(4): 207-211.
[13] Ryu H Y. Effect of internal polarization fields in InGaN/GaN multiple-quantum wells on the efficiency of blue light-emitting diodes [J]. Japanese Journal of Applied Physics, 2012, 51(9): 09MK03-1-4.
[14] Hammersley S, Watson-Parris D, Dawson P, et al. The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures [J]. Journal of Applied Physics, 2012, 111(8): 083512-1-6.
[15] Shmidt N, Andrew G, et al. Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs [J]. Physica Status Solidi (C), 2013, 10(3): 332-334.
[16] Jiang R, Lu H, Chen D J, et al. Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes [J]. Chin. Phys. B, 2013, 22(4): 047805.
[17] Wang J X, Wang L, Zhao W, et al. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization [J]. Appl. Phys. Lett., 2010, 97(20): 201112-1-3.
[19] Son J H, Lee J L. Strain engineering for the solution of efficiency droop In InGaN/GaN light-emitting diodes [J]. Opt. Expr., 2010, 18(6): 5466-5469.
[20] Danhof J, Schwarz U T, Meyer T, et al. Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well [J]. Physica Status Solidi (B), 2012, 249(3): 600-603.
[21] Langer T, Andreas K, et al. Origin of the‘green gap’: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures [J]. Physica Status Solidi (C), 2011, 8(7-8): 2170-2172.
[22] Piprek J. Semiconductor Optoelectronic Devices [M]. San Diego: Academic Press, 2003: 193.
[23] Vurgaftman I, Meye J R. Band parameters for nitrogen-containing semiconductors [J]. Journal of Applied Physics, 2003, 94(6): 3675-3696.
张大庆, 李国斌, 陈长水. 单量子阱InGaN/GaN势垒高度与LED光电性能关系研究[J]. 量子电子学报, 2014, 31(1): 107. ZHANG Da-qing, LI Guo-bin, CHEN Chang-shui. Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance[J]. Chinese Journal of Quantum Electronics, 2014, 31(1): 107.