以不同前驱体制备的TiAlC薄膜的性能对比

杨永亮; 李娜; 张泓筠

doi:doi:10.3788/lop54.113104

激光与光电子学进展, 2017, 54 (11): 113104, 网络出版: 2017-11-17

以不同前驱体制备的TiAlC薄膜的性能对比下载： 592次

Performance Comparison of TiAlC Films Prepared with Different Precursors

论文大纲

杨永亮李娜张泓筠

作者单位

凯里学院物理与电子工程学院，贵州凯里 556011

薄膜原子层沉积均匀性透射率 thin films atomic layer deposition uniformity transmissivity

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摘要

采用原子层沉积技术，以Al(CH3)3为铝的前驱体，分别以TiCl4和四(二甲基氨基)钛(TDMAT)为钛的前驱体制备了两种TiAlC薄膜，并对比分析了它们的薄膜性能。结果表明，这两种薄膜均存在不同程度的自然氧化；以TDMAT为前驱体制备的膜层的光学带隙有两个值，分别是0.68 eV和2.00 eV,而以TiCl4为前驱体制备的薄膜的光学带隙为0.61 eV，前者的平均透射率、沉积速率、电阻率及表面粗糙度均高于后者的，但前者的厚度均匀性较差；以TiCl4为前驱体制备的薄膜为无定形结构，而在以TDMAT为前驱体制备的薄膜中出现了TiN晶体；相对于有机化合物TDMAT而言，无机化合物TiCl4更适合作为制备TiAlC栅介质材料的前驱体。

Abstract

With the Al(CH3)3 as the precursor of Al elements, two kinds of TiAlC films are prepared by using the atomic layer deposition technique with the TiCl4 and the tetrakis (dimethylamino) titanium (TDMAT) as precursors of titanium elements, respectively, and their film performances are compared and analyzed. The results show that, both these two kinds of TiAlC films are oxidized naturally with different degrees. The optical band gap of films prepared with the TDMAT as precursor has two value of 0.68 eV and 2.00 eV, respectively, while that of the thin films prepared with the TiCl4 as precursor is 0.61 eV. Moreover, the average transmissivity, deposition rate, resistivity, and surface roughness of the former are all higher than those of the latter, while the thickness uniformity of the former is worse than that of the latter. The thin films prepared with the TiCl4 as precursor show an amorphous structure, while in the thin films prepared with the TDMAT as precursor, the TiN crystal appears. Compared with the organic compound TDMAT, the inorganic compound TiCl4 is more suitable as the precursor to prepare TiAlC gate dielectric materials.

参考文献

[1] Chaliyawala H A, Gupta G, Kumar P, et al. Structural and mechanical properties of reactively sputtered TiAlC nanostructured hard coatings［J］. Surface and Coatings Technology, 2015, 276: 431-439.

[2] 杨立军, 张泽辉, 李林, 等. C含量对电弧离子镀TiAlCxN1-x(x=0,0.18,0.41,0.49,0.69)薄膜性能的影响［J］. 稀有金属材料与工程, 2015, 44(6): 1455-1458.

Yang Lijun, Zhang Zehui, Li Lin, et al. Effect of C content on properties of TiAlCxN1-x (x=0, 0.18, 0.41, 0.49, 0.69) films deposited by arc ion plating［J］.Rare Metal Materials and Engineering, 2015, 44(6): 1455-1458.

[3] 江婷婷. 原子层淀积高K栅介质和扩散阻挡层及其特性研究［D］. 上海: 复旦大学, 2012: 47-52.

[4] Jeon S, Park S. Tunable work-function engineering of TiC-TiN compound by atomic layer deposition for metal gate applications［J］. Journal of the Electrochemical Society, 2010, 157(10): H930-H933.

[5] Yun J Y, Park M Y, Rhee S W. Comparison of tetrakis (dimethylamino) titanium and tetrakis (diethylamino) titanium as precursors for metallorganic chemical vapor deposition of titanium nitride［J］. Journal of the Electrochemical Society, 1999, 146(5): 1804-1808.

[6] 徐均琪, 杭凌侠, 惠迎雪. 非平衡磁控溅射无氢DLC增透膜的研制［J］. 真空, 2005, 42(5): 22-25.

Xu Junqi, Hang Lingxia, Hui Yingxue. Development of non-hydrogen DLC antireflective films by unbalanced magnetron sputtering (UBMS) process［J］. Vacuum, 2005, 42(5): 22-25.

[7] Lu H L, Scarel G. Lamagna L, et al. Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si(100)［J］. Applied Physics Letters, 2008, 93(15): 152906.

[8] Xie S Y, Cai J, Wang Q, et al. Properties and morphology of TiN films deposited by atomic layer deposition［J］. Tsinghua Science and Technology, 2014, 19(2):144-149.

[9] Seguini G, Bonera E, Spiga S, et al. Energy-band diagram of metal/Lu2O3/silicon structures［J］. Applied Physics Letters, 2004, 85(22): 5316-5318.

[10] 张彬, 王伟丽, 牛巧利, 等. H2气氛退火处理对Nb掺杂TiO2薄膜光电性能的影响［J］. 物理学报, 2014, 63(6): 068102.

Zhang Bin, Wang Weili, Niu Qiaoli, et al. Effects of annealing in H2 atmosphere on optoelectronical properties of Nb-doped TiO2 thin films［J］. Acta Physica Sinica, 2014, 63(6): 068102.

[11] 于鹤. SrTiO3光催化材料光吸收边调控及其光催化产氢性能研究［D］. 南京: 南京大学, 2013: 41-45.

Yu He. The tuning of optical absorption edge and performance of photocatalytic hydrogen evolution for SrTiO3［D］. Nanjing: Nanjing university, 2013: 41-45.

[12] Lynch D W, Olson C G, Peterman D J, et al. Optical properties of TiCx (0.64≤x≤0.90) from 0.1 to 30 eV［J］. Physical Review B, 1980, 22(8): 3991-3997.

[13] Pore V, Heikkila M, Ritala M, et al. Atomic layer deposition of TiO2-xNx thin films for photocatalytic applications［J］. Journal of Photochemistry and Photobiology A: Chemistry, 2006, 177(1): 68-75.

[14] Corneille J S, Chen P J, Truong C M, et al. Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamino)-titanium and ammonia［J］. Journal of Vacuum Science & Technology, 1995, 13(3): 1116-1120.

[15] 马飞. 高K栅介质MOS器件的特性模拟与实验研究［D］. 西安: 西安电子科技大学, 2012: 25-37.

Ma Fei. Simulation and experimental study on MOSFET with high-K gate dielectric［D］. Xi′an: Xidian University, 2012: 25-37.

[16] 李敏, 黄坚, 朱彦彦, 等. BN含量对激光熔覆TiB+TiN复合涂层显微组织和摩擦性能的影响［J］. 中国激光, 2015, 42(9): 0903001.

Li Min, Huang Jian, Zhu Yanyan, et al. Effect of BN content on microstructure evolution and wear property of in situ Ti/(TiB+TiN) hybrid composite coating by laser cladding［J］. Chinese J Lasers, 2015, 42(9): 0903001.

[17] 王晨. 基于高K栅介质的III-V族化合物半导体MOS器件研究［D］. 上海: 复旦大学, 2012: 48-51.

杨永亮, 李娜, 张泓筠. 以不同前驱体制备的TiAlC薄膜的性能对比[J]. 激光与光电子学进展, 2017, 54(11): 113104. Yang Yongliang, Li Na, Zhang Hongyun. Performance Comparison of TiAlC Films Prepared with Different Precursors[J]. Laser & Optoelectronics Progress, 2017, 54(11): 113104.

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