[1] Kuech T F, Tischler M A, Wang P J,et al.Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy. Appl Phys Lett,1988, 53(14):1317～1319

[2] Watanabe N, Hiroshi I. Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition. Journal of Crystal Growth,1997,178:213～219

[3] Kushibe M, Eguchi K, Funamizu M, et al. Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using low Ⅴ/Ⅲ ratio. Appl Phys Lett, 1990, 56(13): 1248～1250

[4] De Lyon T J, Woodall J M, Goorsky M S, et al. Lattice contraction due to carbon doping of GaAs grow by metalorganic molecular beam epitaxy. Appl Phys Lett, 1990,56(11):1040～1042

[5] Takamoto T, Yumaguchi M. Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells. Journal of Applied Physics, 1999,1482～1486

[6] Gotoh S, Ueda T, Kakinuma H, et al. Thermal stability of GaAs tunnel junctions using caubon as a p-type dopant grown by metal-organic vapor phase epitaxy. Solar Energy Material and Solar Cells, 1998, 50: 281～288

[7] 朱南昌,陈琼一,李润身,等. GaAs 中Si+注入的X射线双晶衍射研究.半导体学报,1992,13(2): 95-100Zhu N C, Chen Q Y, Li R S, et al.Chinese Journal of Semiconductors, 1992,13(2):95～100

[8] 朱南昌,李润身,陈京一,等.单晶外延层厚度的X射线衍射测定.半导体学报,1992,13(11): 690～696Zhu N C, Li R S, Chen J Y, et al. Chinese Journal of Semiconductors, 1992,13(11)692～696