飞秒脉冲激光对硅基多层膜损伤特性

为了明确超快激光损伤典型成像探测器膜层结构的物理机制, 对飞秒脉冲激光辐照硅基多层膜的损伤特性, 以及各种损伤效应对应的激光能量通量范围和阈值条件进行研究。利用波长为800 nm、脉冲宽度为100 fs的脉冲激光和金相显微镜研究了硅基多层膜在不同激光能量通量和不同脉冲累积下的损伤效应。在能量通量为101~247 J/cm2的激光单脉冲辐照下, 激光作用区域可观察到氧化/无定形化、非热烧蚀和激光诱导等离子体烧蚀所引起的表面损伤, 其损伤效应与激光能量通量有明显联系, 激光作用区域尺寸随能量通量线性增大。在242 J/cm2到247 J/cm2激光能量通量范围内, 可在辐照表面观察到激光诱导压力导致的多层损伤, 损伤概率随激光能量通量的增加由1%增大到51%。在激光能量通量为101 J/cm2的连续多脉冲辐照下, 烧蚀区域尺寸几乎不变, 但烧蚀深度逐渐增加, 其多层损伤机制为表面损伤的累积效应。通过单脉冲损伤实验数据拟合计算确定, 飞秒激光诱导硅基多层膜表面损伤阈值为0543 J/cm2, 应力多层损伤阈值为216 J/cm2。低激光能量通量(≤101 J/cm2)多脉冲辐照累积作用同样可造成硅基多层膜深层损伤。

Abstract

In order to understand the ultrafast laser-induced damage mechanisms of typical imaging sensor′s film structures, the damage characteristics of Si-based multi-layer films irradiated by a femtosecond pulsed laser were investigated, and the laser pulse fluence ranges and threshold conditions corresponding to various damage phenomena were evaluated. Si-based multi-layer films that were similar in structure of CCD were prepared by electron beam deposition. The damage characteristics of these films irradiated by a femtosecond pulsed laser with wavelength of 800 nm and pulse width of 100 fs under different pulse fluences and numbers were investigated using a metallurgical microscope. Experimental results showed that the laser-affected zone size increased linearly with pulse fluence in the range of 101 to 247 J/cm2. Surface damage caused by oxidation/amorphization, non-thermal ablation, and laser-induced plasma ablation could be observed in the laser irradiated zone, which tightly depended on the pulse fluence. Multi-layer damage could be observed and the damage probability increased from 1% to 51% in the pulse fluence range from 242 to 247 J/cm2. Irradiated by sequent pulses at a fluence of 101 J/cm2, the laser affected zone remained almost unchanged and the ablated depth increased with the pulse number. From the single pulse damage experiment data, the femtosecond pulse laser-induced surface damage threshold was evaluated to be 0543 J/cm2 and laser-induced multi-layer stress damage threshold was linearly fitted to be 216 J/cm2. Sequent pulse irradiation with low fluence(≤101 J/cm2) also could lead to deep damage on the multi-layer film.

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