红外与激光工程, 2018, 47 (9): 0920006, 网络出版: 2018-10-06
γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响
Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray
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马腾, 苏丹丹, 周航, 郑齐文, 崔江维, 魏莹, 余学峰, 郭旗. γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响[J]. 红外与激光工程, 2018, 47(9): 0920006. Ma Teng, Su Dandan, Zhou Hang, Zheng Qiwen, Cui Jiangwei, Wei Ying, Yu Xuefeng, Guo Qi. Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray[J]. Infrared and Laser Engineering, 2018, 47(9): 0920006.
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