Pb(Zrx,Ti1-x)O3成分梯度铁电薄膜的制备、结构及电性能表征

李建康; 姚熹

红外与毫米波学报, 2005, 24 (4): 250, 网络出版: 2006-05-10

Pb(Zr_x,Ti_1-x)O₃成分梯度铁电薄膜的制备、结构及电性能表征

PREPARATION, STRUCTURE AND CHARACTERISTICS ON COMPOSITIONALLY GRADED Pb(Zrx,Ti1-x)O3 FERROELECTRIC THIN FILMS

论文大纲

李建康 ¹姚熹 ²

作者单位

¹ 苏州科技学院,电子与信息工程系,江苏,苏州,215011

² 西安交通大学,电子材料研究所,陕西,西安,710049

成分梯度薄膜锆钛酸铅快速热处理热释电系数 compositionally graded thin films Pb（Zr_xTi_1-x）O₃ pyroelectric coefficient

摘要

采用Sol-Gel方法,通过快速热处理,在Pt/Ti/SiO2/Si衬底上制备出Pb(Zrx,Ti1-x)O3成分梯度薄膜.经俄歇微探针能谱仪(AES)对制备的"上梯度"薄膜进行了成分深度分析,结果证实其成分梯度的存在.经XRD分析表明,制备的梯度薄膜为四方结构和三方结构的复合结构,但其晶面存在一定的结构畸变.经介电频谱测试表明,梯度薄膜的介电常数比每个单元的介电常数都大,但介电损耗相近.在10 kHz时,上、下梯度薄膜的介电常数分别为206和219.经不同偏压下电滞回线的测试表明,上、下梯度薄膜均表现出良好的铁电性质,其剩余极化强度Pr分别为24.3和26.8 μC·cm-2.经热释电性能测试表明,热释电系数随着温度的升高逐渐增加,室温下上、下梯度薄膜的热释电系数分别为5.78和4.61×10-8 C·cm-2K-1,高于每个单元的热释电系数.

Abstract

Compositionally graded Pb(Zr_x,Ti_1-x)O₃ thin films were prepared on platinum-coated silicon substrates by Sol-Gel method and rapid heat-treatment. The composition depth profile of a typical up-graded film was determined by using a combination of auger electron spectroscopy and Ar ion etching. The results confirm that the processing method produces graded composition change. XRD analysis shows that the graded thin films possess the structure of tetragonal and rhombohedral. The dielectric constant of the graded thin films is higher than that of each thin film unit, but dielectric loss is near to each other. The dielectric constants of up-graded and down-graded thin films are 206 and 219 at 10 kHz, respectively. The hysteresis loops of the graded thin films show fine ferroelectric properties. The remanent polarizations of up-graded and down-graded thin films are 24.3 and 26.8 μC·cm~(-2), respectively. The pyroelectric coefficient of the graded thin films gradually increases with the temperature up, and is higher than that of each thin film unit. The pyroelectric coefficients of up-graded and down-graded thin films are 5. 78 and 4. 61 ×10 ^-8 C·cm^-2 K^-1 at room temperature, respectively.

参考文献

[1] . Mechanical deformation of PZT thin films for MEMS applications[J]. Materials Science and Engineering A, 1999, 259(1): 126-131.

[2] . Drying temperature effects on microstructure, electrical properties and lectro-optic coefficients of sol-gel derived PZT thin films[J]. Thin Solid Films, 1999, 340(1): 242-249.

[3] . Structural and abnormal electrical properties of excess PbO-doped lead lanthanum titanate thin films[J]. Phys.D: Appl. phys., 2000, 33(7): 764-772.

[4] WANG Gen-Shui, HU Zhi-Gao, SHI Fu-Wen, et al. Strucural and optical properties of PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 multilayer thin films prepared by chemical solution routes [J]. J. Infrared Millim. Waves (王根水,胡志高,石富文,等.化学溶液法制备PbZr0.5 Ti0.5O3/La0.5 Sr0.5 CoO3铁电多层薄膜的结构和光学性质研究.红外与毫米波学报),2003,22(1):23-26.

[5] . Ferroelectric memories[J]. Ferroelectrics, 1992, 128: 265-292.

[6] . Electron emission type infrared imaging sensor using ferroelectric thin plate[J]. Sensors and Actuator A, 2002, 98(1): 147-152.

[7] Tang X G, Chan H L W, Ding A L. Electrical properties of compositionally graded lead calcium titanate thin films [J]. Solid State Communications, 2003, 127(9-10): 625-628.

[8] Wang X S, Wang C L, Zhong W L, et al. Temperature graded ferroelectric films described by the transverse Ising model [J]. Physics Letters A, 2001, 285(3-4): 212-216.

[9] . Compositionally graded Pb(Zr,Ti)O3 thin films with different crystallographic orientations[J]. Thin Solid Films, 2003, 436(2): 157-161.

[10] Li Jian-Kang, Yao Xi. Study on a new and rapid heat-treatment process for fabricating lead zirconate titanate thin film [J]. J. Infrared Millimetre Waves (李建康,姚熹. 一种新的铁电薄膜快速热处理工艺的研究. 红外与毫米波学报),2004, 23(2): 91-94.

[11] Dong-Joo Kim, Piezoelectric and ferroelecyric properties of lead zirconate titanate thin films [D]. PhD Thesis, Univ. of North Carolina State, 2001, 22.

李建康, 姚熹. Pb(Zr_x,Ti_1-x)O₃成分梯度铁电薄膜的制备、结构及电性能表征[J]. 红外与毫米波学报, 2005, 24(4): 250. 李建康, 姚熹. PREPARATION, STRUCTURE AND CHARACTERISTICS ON COMPOSITIONALLY GRADED Pb(Zrx,Ti1-x)O3 FERROELECTRIC THIN FILMS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(4): 250.

Pb(Zr_x,Ti_1-x)O₃成分梯度铁电薄膜的制备、结构及电性能表征

关于本站 Cookie 的使用提示

全站搜索