Author Affiliations
Abstract
1 Soft Matter Physics, Johannes Kepler University, Altenbergerstraße 69, 4040 Linz, Austria
2 Institute of Applied Sciences & Intelligent Systems, National Research Council (CNR-ISASI), Via Campi Flegrei 34, 80078 Pozzuoli (NA), Italy
The characterization of pyroelectric materials is essential for the design of pyroelectric-based devices. Pyroelectric current measurement is the commonly employed method, but can be complex and requires surface electrodes. Here, we present noncontact electrostatic voltmeter measurements as a simple but highly accurate alternative, by assessing thermally-induced pyroelectric surface potential variations. We introduce a refined model that relates the surface potential variations to both the pyroelectric coefficient and the characteristic figure of merit (FOM) and test the model with square-shaped samples made from PVDF, LiNbO3 and LiTaO3. The characteristic pyroelectric coefficient for PVDF, LiNbO3 and LiTaO3 was found to be 33.4, 59.9 and 208.4 C m K, respectively. These values are in perfect agreement with literature values, and they differ by less than 2.5% from values that we have obtained with standard pyroelectric current measurements for comparison.
Pyroelectric coefficient surface potential figure of merit Journal of Advanced Dielectrics
2023, 13(4): 2341002
1 西安工业大学 光电微系统研究所,陕西 西安 710032
2 华中光电技术研究所,湖北 武汉 430074
在制造红外热释电探测器阵列过程中,需要利用超薄钽酸锂(LiTaO3)晶片作为红外热释电探测器件的敏感层。通常LiTaO3晶片的厚度远厚于红外热释电探测器件要求的厚度,所以需要采用键合减薄技术对LiTaO3晶片进行加工处理。键合减薄技术主要包括:苯并环丁烯(BCB)键合、铣磨、抛光、加热剥离、刻蚀BCB。加工后得到面积为10 mm×10 mm、厚度为25μm的超薄单晶LiTaO3薄膜,晶片厚度、表面粗糙度和面形精度比较理想。测得了LT晶片减薄后的热释电系数为1.6×10-4Cm-2K-1。得到的单晶LiTaO3薄膜满足红外热释电探测器敏感层的要求。
红外热释电探测器 LiTaO3晶片 键合减薄 热释电系数 pyroelectric infrared detector LiTaO3 wafer wafer bonding and mechanical thinning pyroelectric coefficient
1 苏州科技学院,电子与信息工程系,江苏,苏州,215011
2 西安交通大学,电子材料研究所,陕西,西安,710049
采用Sol-Gel方法,通过快速热处理,在Pt/Ti/SiO2/Si衬底上制备出Pb(Zrx,Ti1-x)O3成分梯度薄膜.经俄歇微探针能谱仪(AES)对制备的"上梯度"薄膜进行了成分深度分析,结果证实其成分梯度的存在.经XRD分析表明,制备的梯度薄膜为四方结构和三方结构的复合结构,但其晶面存在一定的结构畸变.经介电频谱测试表明,梯度薄膜的介电常数比每个单元的介电常数都大,但介电损耗相近.在10 kHz时,上、下梯度薄膜的介电常数分别为206和219.经不同偏压下电滞回线的测试表明,上、下梯度薄膜均表现出良好的铁电性质,其剩余极化强度Pr分别为24.3和26.8 μC·cm-2.经热释电性能测试表明,热释电系数随着温度的升高逐渐增加,室温下上、下梯度薄膜的热释电系数分别为5.78和4.61×10-8 C·cm-2K-1,高于每个单元的热释电系数.
成分梯度薄膜 锆钛酸铅 快速热处理 热释电系数 compositionally graded thin films Pb(ZrxTi1-x)O3 pyroelectric coefficient