Thin nanocomposite films based on tin dioxide with a low content of zinc oxide (0.5–5mol.%) were obtained by the sol–gel method. The synthesized films are 300–600nm thick and contains pore sizes of 19–29nm. The resulting ZnO–SnO₂ films were comprehensively studied by atomic force and Kelvin probe force microscopy, X-ray diffraction, scanning electron microscopy, and high-resolution X-ray photoelectron spectroscopy spectra. The photoconductivity parameters on exposure to light with a wavelength of 470nm were also studied. The study of the photosensitivity kinetics of ZnO–SnO₂ films showed that the film with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant. Measurements of the activation energy of the conductivity, potential barrier, and surface potential of ZnO–SnO₂ films showed that these parameters have maxima at ZnO concentrations of 0.5mol.% and 1mol.%. Films with 1mol.% ZnO exhibit high response values when exposed to 5–50ppm of nitrogen dioxide at operating temperatures of 200∘C and 250∘C.

The characterization of pyroelectric materials is essential for the design of pyroelectric-based devices. Pyroelectric current measurement is the commonly employed method, but can be complex and requires surface electrodes. Here, we present noncontact electrostatic voltmeter measurements as a simple but highly accurate alternative, by assessing thermally-induced pyroelectric surface potential variations. We introduce a refined model that relates the surface potential variations to both the pyroelectric coefficient and the characteristic figure of merit (FOM) and test the model with square-shaped samples made from PVDF, LiNbO₃ and LiTaO₃. The characteristic pyroelectric coefficient for PVDF, LiNbO₃ and LiTaO₃ was found to be 33.4, 59.9 and 208.4 μC m−2 K−1, respectively. These values are in perfect agreement with literature values, and they differ by less than 2.5% from values that we have obtained with standard pyroelectric current measurements for comparison.

用光谱响应测试仪得到了反射式梯度掺杂GaN光电阴极在激活和衰减过程中的光谱响应曲线, 发现此曲线不断发生变化。在激活过程中光谱响应不断提高,且长波响应提高较快;衰减过程中光 谱响应不断下降,长波响应下降得更快。结果表明:光谱响应曲线的变化与光电阴极高能光电子的 逸出有关。GaN光电阴极发射的电子能量分布随入射光子能量升高而向高能端偏移,阴极表面势垒 形状的变化对低能光激发电子的影响更大,导致光谱响应曲线随入射光波长改变而产生了不同的变化。

通过在常规横向PNP晶体管基区表面氧化层上淀积栅电极，制作了可以利用栅极偏置调制基区表面势的栅控横向PNP晶体管。对无栅极偏置电压和偏置电压分别为-10 V和10 V的栅控横向PNP晶体管，在西安脉冲反应堆上开展注量为2×10^{12,4×1012, 6×1012, 8×1012，1×1013 cm-2的中子辐照实验，研究基区表面势的增加和降低对栅控横向PNP晶体管中子位移损伤退化特性的影响。研究结果表明，基区表面势的增加引起栅控横向PNP晶体管共射极电流增益倒数的变化量随辐照中子注量的退化速率增加，基区表面势的降低对位移损伤退化速率无明显影响。}

处于等离子体环境中的航天器的介质材料受到带电粒子的作用，表面将产生电位。对背面接地的介质材料，上表面将与接地背面形成电势差。当电势差达到一定阈值时将产生放电，表面充电电位对充放电效应影响至关重要。综合考虑等离子体中粒子的质量、温度及密度，介质材料的二次电子效应，体电流泄漏以及介质材料的运行速度等因素，基于气体动理论，利用粒子的麦克斯韦速度分布函数理论推导得出等离子体环境中背面接地介质材料表面充电电位一般表达式。讨论了地球同步轨道环境下，表面电位与等离子体环境及材料表面电阻等各个参数的关系，总结出等离子环境背面接地介质材料表面充电规律，为航天器介质材料静电防护设计提供一定的理论基础。

采用直流磁控溅射法制备了不同厚度的金纳米薄膜，在高纯氮气气氛、800 ℃条件下快速退火，在石英基底上制备了具有表面微纳颗粒的新型金阴极。应用扫描电子显微镜对阴极的表面形貌进行表征，结果表明：阴极表面形成了均匀分布的金纳米颗粒，平均粒径随金纳米薄膜厚度的增加(5 nm至20 nm)从300 nm增大到800 nm。在190~360 nm紫外光下，对阴极的光电子发射特性进行了研究，结果表明：相对于平面阴极，新型金阴极的光电子发射效率提高了10倍以上，最高可达到平面阴极的16倍，且随颗粒粒径的减小而增大。采用“三步”光电发射模型对上述结果进行理论分析，表明阴极光电效率的提高主要由于阴极光电发射面积的增加和局域强电场导致的表面势垒降低。

GaAs光电阴极量子效率公式中用到的表面电子逸出概率,在阴极工作波段范围内通常视为与入射光子波长无关的常数。应用该结论对反射式GaAs光电阴极激活实验结果进行了拟合分析。实验采用分子束外延GaAs材料,外延发射层厚度为1.6 μm、掺杂浓度为1×1019 cm-3,分析结果显示理论曲线与实验曲线存在偏差,而在激活台内阴极灵敏度下降后的光谱响应曲线拟合结果偏差更大。这种偏差是由于表面电子逸出概率对入射光子波长的依赖关系造成的,并非通常认为的与波长无关。经过光谱响应曲线的拟合分析得出,反射式阴极表面电子逸出概率与入射光子波长之间近似满足指数关系,两者通过表面势垒因子相联系。高、低温激活后阴极表面势垒因子分别为3.53和1.36。

用荧光标记物1,8 ANS与细菌视紫红质结合,测得紫膜细菌视紫红质在能化态时的表面电位远大于非能化态时的对应值。在细菌视紫红质分子的激光四波混频实验中,应用激子表象理论,获得了紫膜能化态时的激子饱和密度和激子长度,说明在bR ANS络合物中,细菌视紫红质中色氨酸残基对ANS的激发能量转移效率提高,能化态时表面电荷密度增加,从而使非辐射共振转移变为激子转移,也证明了紫膜能化态时表面电位的非线性光学机制。