对于环境检测和高速光通信而言, 高性能紫外光电探测器是关键。利用气相沉积法在无催化剂条件下制备氧化锌纳米线网, 在纳米线网上直接制备光电器件的性能得到了提高。结果显示, 纳米线网光电探测器的光电流为60 ?滋A, 大约是单根纳米线光电器件光电流的15倍。详细讨论纳米线网光电探测器的响应机制发现, 在纳米线网内, 纳米线与纳米线之间的结势垒高度决定了纳米线内部载流子的传输。当紫外光照射纳米线网光电探测器时, 纳米线与纳米线之间结势磊高度的快速变低, 从而提高光电器件的性能。

High performance ultraviolet(UV) photodetectors(PDs) are critical for the high-speed optical communication and environmental sensing. Here, the performance of ZnO PDs was improved by directly fabricating photoelectric device on the ZnO nanowires(NWs) networks made by chemical vapor deposition (CVD) without any seed layer or metal catalyst. Results showed that the photocurrent of the ZnO NWs networks PDs is 60 ?滋A, which was about 15 times of the single ZnO NW PDs. The response mechanism of ZnO NWs networks PDs was investigated in detail. Specially, the interconnections in ZnO NWs networks creat NW-NW junction barriers, which dominate the inter-wire charge transport. The fast tuning of NWs networks junction barrier height under the UV radiation, which contributes to the enhanced performance of the ZnO NWs networks UV PDs.