Au/Cd复合电极沉积方法对其与(111)面CdZnTe衬底接触性能的影响
师好智, 张继军, 王淑蕾, 王振辉, 穆成阳, 薛名言, 曹萌, 黄健, 王林军, 夏义本. Au/Cd复合电极沉积方法对其与(111)面CdZnTe衬底接触性能的影响[J]. 红外与毫米波学报, 2020, 39(5): 595.
Hao-Zhi SHI, Ji-Jun ZHANG, Shu-Lei WANG, Zhen-Hui WANG, Cheng-Yang MU, Ming-Yan XUE, Meng CAO, Jian HUANG, Ling-Jun WANG, Yi-Ben XIA.
[1] Zhang Yang, Wu Jun, Mu Sheng, 等. CdZnTe中富碲沉积相缺陷引起的液相外延HgCdTe薄膜表面缺陷[J]. 红外与毫米波学报), 2018, 37(6): 728-733.
[2] Limousin O. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications[J]. Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, 2003, 513(3): 651-651.
[3] , Mark L, Luke J, et al.
[4] Verger L, Bonnefoy J, et al. . New developments in CdTe and CdZnTe detectors for x and gamma-ray applications[J]. Journal of Electronic Materials, 1997, 26(6): 738-744.
[5] Awadalla S, et al.
[6] Xu Chao, Sun Shi-Wen, Yang Jian-Rong, 等. 红外光吸收成像技术在碲锌镉材料检测中的应用[J]. 红外与毫米波学报), 2019, 38(3): 325-330.
[7] Duff M, et al.
[8] Bolotnikov A, et al.
[9] Chen H, Awadalla S, et al.
[10] Sun J, Fu L, Nie Z, et al.
[11] Tari S, Aqariden F, Chang Y, et al. Structural and Electronic Properties of Gold Contacts on CdZnTe with Different Surface Finishes for Radiation Detector Applications[J]. Journal of Electronic Materials, 2014, 43(8): 2978-2983.
[12] Yang Liu-Qing, Min Jia-Hua, Liang Xiao-Yan, et al. Investigation on the contact interface of Au/Zn on CdZnTe (111) B surface[J]. Materials Science in Semiconductor Processing, 2017, 67: 175-180.
[13] Ling Li-Wen, Zhang Ji-Jun, Zhao Shu-Hao, et al. Surface analysis and electrical measurement of the ohmic contact on p-CdZnTe (111)B face with Au/Cd composite electrode[J]. Materials Science in Semiconductor Processing, 2019, 98: 90-94.
[14] Zha Gang-Qiang, Wan-Qi Jie, Tan Ting-Ting, et al. The atomic and electronic structure of CdZnTe (111) A surface[J]. Chemical Physics Letters, 2006, 427(1-3): 197-200.
[15] Hossain A, Bolotnikov A, et al.
[16] Zheng Q, Dierre F, Ayoub M, et al. Comparison of radiation detector performance for different metal contacts on CdZnTe deposited by electroless deposition method[J]. Crystal Research and Technology, 2011, 46(11): 1131-1136.
[17] Promros N, Sittimart P, Kaenrai W. Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films[J]. International Journal of Nanotechnology, 2016, 13(10-12): 903-912.
[18] Sonmezoglu S. Current Transport Mechanism of n-TiO2/p-ZnO Heterojunction Diode[J]. Applied Physics Express, 2011, 4(10).
[19]
师好智, 张继军, 王淑蕾, 王振辉, 穆成阳, 薛名言, 曹萌, 黄健, 王林军, 夏义本. Au/Cd复合电极沉积方法对其与(111)面CdZnTe衬底接触性能的影响[J]. 红外与毫米波学报, 2020, 39(5): 595. Hao-Zhi SHI, Ji-Jun ZHANG, Shu-Lei WANG, Zhen-Hui WANG, Cheng-Yang MU, Ming-Yan XUE, Meng CAO, Jian HUANG, Ling-Jun WANG, Yi-Ben XIA.