液晶与显示, 2012, 27 (3): 313, 网络出版: 2012-06-11   

高性能顶栅结构有机薄膜晶体管

High Performance Organic Thin Film Transistor Based on Top-Gate Configuration
作者单位
中国科学院 上海高等研究院 新型显示技术研究中心,上海201210
摘要
采用六联苯(p-6P)和氧钒酞菁(VOPc)作为有源层材料,利用弱外延生长技术制备有机薄膜晶体管(OTFT)。在相同的工艺条件下制备了顶栅结构(top-gate)和底栅结构(bottom-gate)两种器件构型,发现两种不同结构的OTFT器件特性存在较大的差异,top-gate OTFT的迁移率比bottom-gate OTFT 高很多。在顶栅结构的器件构型中获得了较高的器件特性参数,迁移率达到1.6 cm2/V·s。研究了弱外延生长技术应用在两种不同器件构型中的差异,并解释了顶栅结构OTFT迁移率较高的原因。
Abstract
Organic thin film transistors based on Weak Epitaxy Growth (WEG) technology are fabricated with two different design: top-gate and bottom-gate configurations. The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine (VOPc). The two structural OTFTs are prepared under the same process conditions, and it is found that the device performance is different. The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT. A high mobility of 1.6 cm2/V·s is obtained in the top-gate structure. The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth (WEG) technology, and the reasons of higher mobility OTFT based on the top-gate configuration is explained.
参考文献

[1] 吴为敬,颜骏,许志平,等. IGZO TFT与ZnO TFT的性能比较 [J]. 液晶与显示, 2011,26(2): 147-153.

[2] 徐小丽,刘如,郭小军,等. 基于不同TFT技术的AMOLED像素电路仿真分析 [J]. 液晶与显示, 2010,25(4): 565-568

[3] Zaumseil Z, Friend R H, Sirringhaus H, et al. Spatial control of the recombination zone in an ambipolar light-emitting organic transistor [J]. Nature Mat., 2006, (1):69-74.

[4] Crone B, Dodabalapur A, Lin Y Y, et al. Large-scale complementary integrated circuits based on organic transistors [J]. Nature, 2000, (403): 521-523.

[5] Someya T, Sekitani T, Kato Y, et al. A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications [J]. Proc.Natl. Acad. Sci. USA, 2004, (101):9966-9970.

[6] Kitamura M, Imada T, Arakawa Y, Organic light-emitting diodes driven by pentacene-based thin-film transistors [J]. Appl. Phys. Lett., 2003, 83(16):3410-3412.

[7] Kelly T W, Muyres D V, Baude P F, et al. High performance organic thin film transistors [J]. Mat. Res.Soc. Symp. Proc.,2003, 771:169-179.

[8] Wang H B, Zhu F, Ya D H, et al. Weak Epitaxy Growth Affording High-Mobility Thin Films of Disk-Like Organic Semiconductors [J]. Adv. Mater. ,2007, 19(16):2168-2171.

[9] Wang H B, Song D, Yan D H, et al. High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors [J].Appl. Phys. Lett.,2007, (90):253510(1-3).

[10] 刘向,刘惠,薛钰芝. OTS修饰的不同厚度酞菁铜OTFT的研究 [J]. 液晶与显示,2009,24(1):66-70.

[11] 袁剑锋,闫东航,许武. 有机薄膜晶体管阈值电压漂移现象的研究 [J]. 液晶与显示,2004,19(3):168-173.

[12] 廖燕平,王军. 有机薄膜晶体管及其集成电路 [J]. 现代显示, 2007,(78): 7-14.

[13] Lee J, Kim K, Kim J, et al. Optimum channel thickness in pentacene-based thin-film transistors [J]. Appl. Phys. Lett., 2003, 82(23):4169-4171.

洪飞, 谭莉, 朱棋锋, 向长江, 韩学斌, 张其国, 郭晓东, 申剑锋. 高性能顶栅结构有机薄膜晶体管[J]. 液晶与显示, 2012, 27(3): 313. HONG Fei, TIAN Li, ZHU Qi-feng, XIANG Chang-jiang, HAN Xue-bin, ZHANG Qi-guo, GUO Xiao-dong, SHEN Jian-feng. High Performance Organic Thin Film Transistor Based on Top-Gate Configuration[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(3): 313.

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