[1] NOMURA K, OHTA H, TAKAGI A, et al.. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors ［J］. Nature, 2004, 432(7016):488-492.

[2] 高娅娜, 李喜峰, 张建华. 溶胶凝胶法制备高性能锆铝氧化物作为绝缘层的薄膜晶体管 ［J］. 物理学报, 2014, 63 (11):118502-1-6.GAO Y N, LI X F, ZHANG J H. Solution-processed high performance HIZO thin film transistor with AZO gate dielectric ［J］. Acta Phys. Sinica, 2014, 63(11):118502-1-6. (in Chinese)

[3] LI X F, LI Q, XIN E L, et al.. Sol-gel processed indium zinc oxide thin film and transparent thin-film transistors ［J］. J. Sol-Gel Sci. Technol., 2013, 65 (2): 130-134.

[4] KIM Y J, OH S, YANG B S, et al.. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors ［J］. ACS Appl. Mater. Interf., 2014, 6(16):14026-14036.

[5] LI X F, XIN E L, ZHANG J H. Effects of hf incorporation on indium zinc oxide thin-film transistors using solution process ［J］. Electron. Mater. Lett., 2015, 11(1):143-148.

[6] ROBERTSON J. High dielectric constant oxides ［J］. Eur. Phys. J. Appl. Phys., 2004, 28(3):265-291.

[7] FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of recent advances ［J］. Adv. Mater., 2012, 24(22):2945-2986.

[8] JANG K S, WEE D, KIMY H, et al.. Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors ［J］. Langmuir, 2013, 29(23):7143-7150.

[9] DING X, ZHANG J, ZHANG H, et al.. ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor ［J］. Microelectron. Reliab., 2014, 54(11):2401-2405.

[10] 郭永林, 梁续旭, 胡守成,等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究 ［J］. 发光学报, 2015, 36(8):947-952.GUO Y L, LIANG X X, HU S C, et al.. Improvement of IGZO-TFTs performance with SiNx gate insulator modified by Al2O3 film ［J］. Chin. J. Lumin., 2015, 36(8):947-952. (in Chinese)

[11] GAO Y N, LI X F, CHEN L L, et al.. High mobility solution-processed hafnium indium zinc oxide TFT with an Al-doped ZrO2 gate dielectric ［J］. IEEE Electron. Dev. Lett., 2014, 35(5):554-556.

[12] ZHANG L, LI J, ZHANG X W, et al.. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature ［J］. Appl. Phys. Lett., 2009, 95(7):072112-1-3.

[13] YANG W, SONG K, JEONG Y, et al.. Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors ［J］. J. Mater. Chem. C, 2013, 1(27):4275-4282.

[14] PARK J H, YOO Y B, LEE KH, et al.. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric ［J］. ACS Appl. Mater. Interf., 2013, 5(2):410-417.

[15] 李喜峰, 信恩龙, 石继峰,等. 低温透明非晶IGZO薄膜晶体管的光照稳定性 ［J］. 物理学报, 2013, 62(10):108503-1-5.LI X F, XIN E L, SHI J F, et al.. Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination ［J］. Acta Phys. Sinica, 2013, 62(10):108503-1-5. (in Chinese)