发光学报, 2016, 37 (1): 50, 网络出版: 2016-03-22
溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管
Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films
补充材料
高娅娜, 许云龙, 张建华, 李喜峰. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016, 37(1): 50. GAO Ya-na, XU Yun-long, ZHANG Jian-hua, LI Xi-feng. Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films[J]. Chinese Journal of Luminescence, 2016, 37(1): 50.