In0.53Ga0.47As/In0.52Al0.48As雪崩光电二极管的数值模拟研究
[1] Masahiro Nada, Haruki Yokoyama, Yoshifumi Muramoto, et al. 50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s Ethernet systems[J]. Optics Express, 2014, 22(12): 14681-14687.
[2] 石柱, 何伟, 覃文治, 等. 中心带雪崩光电二极管的InGaAs PIN四象限探测器[J]. 红外与激光工程, 2010, 39(5): 824-829.
Shi Zhu, He Wei, Qin Wenzhi, et al. Quadrant PIN photo-detector integrated APD in the center on the basis of InGaAs heterostructure[J]. Infrared and Laser Engineering, 2010, 39(5): 824-829. (in Chinese)
[3] 王飞. 实时激光三维成像焦平面阵列研究进展[J]. 中国光学, 2013, 6(3): 297-305.
[4] Mohammad A Saleh, Majeed M Hayat, Paul P Sotirelis, et al. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes[J]. IEEE Trans Electron Devices, 2001, 48(12): 2722-2731.
[5] Yuan P, Hansing C C, Anselm K A, et al. Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thickness[J]. IEEE J Quantum Electron, 2000, 36: 198-204.
[6] Dwivedi A D D, Mittal A, Agrawal A, et al. Analytical modeling and ATLAS simulation of N+-InP/n0- In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication[J]. Infrared Physics & Technology, 2010, 53: 236-245.
[7] Sotoodeh M, Khalid A H, Rezazadeh A A. Empirical low-field mobility model for III-V compounds applicable in device simulation codes[J]. J Appl Phys, 2000, 87(6): 2890-2900.
[8] Campbell J C, Tsang W T, Qua G J, et al. High-speed InP/InGaAsP/InGaAs Avalanche Photodiodes Grown by Chemical Beam Epitaxy[J]. IEEE J Quantum Electron,1988, 24(3): 496-500.
[9] Joe C Campbell. Recent advances in telecommunications avalanche photodiodes[J]. J Lightwave Technol, 2007, 25(1): 109-121.
[10] McIntyre R J. Mulyiplication noise in uniform avalanche diodes[J]. IEEE Transactions on Electron Devices, 1966, 13(1): 164-168.
[11] Eiji Yagyu, Eitaro Ishimura, Masaharu Nakaji, et al. Design and characteristics of guardring-free planar InAlAs avalanche photodiodes[J]. Journal of Lightwave Technology, 2009, 27(8): 1011-1017.
李慧梅, 胡晓斌, 白霖, 李晓敏, 于海龙, 徐云, 宋国峰. In0.53Ga0.47As/In0.52Al0.48As雪崩光电二极管的数值模拟研究[J]. 红外与激光工程, 2016, 45(5): 0520005. Li Huimei, Hu Xiaobin, Bai Lin, Li Xiaomin, Yu Hailong, Xu Yun, Song Guofeng. Numerical simulation study on In0.53Ga0.47As/In0.52Al0.48As avalanche photodiode[J]. Infrared and Laser Engineering, 2016, 45(5): 0520005.