Chinese Optics Letters, 2007, 5 (5): 308, Published Online: Jun. 27, 2007  

Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer Download: 570次

Author Affiliations
1 School of Science, Civil Aviation University of China, Tianjin 300300
2 Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072
3 Key Laboratory of Optoelectronic Information Technical Science, Ministry of Education of China, Tianjin 300072
Abstract
Micro-deposition of an aluminum film of 500-nm thickness on a quartz substrate was demonstrated by laser-induced forward transfer (LIFT) using a femtosecond laser pulse. With the help of atomic force microscopy (AFM) and scanning electron microscopy (SEM), the dependence of the morphology of deposited aluminum film on the irradiated laser pulse energy was investigated. As the laser fluence was slightly above the threshold fluence, the higher pressure of plasma for the thicker film made the free surface of solid phase burst out, which resulted in that not only the solid material was sputtered but also the deposited film in the liquid state was made irregularly.

Li Yang, Qingyue Wang, Xiaochang Ni, Yinzhong Wu, Wei Jia, Lu Chai. Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer[J]. Chinese Optics Letters, 2007, 5(5): 308.

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