An interesting transition between low spatial frequency laser-induced periodic surface structure (LIPSS) and high spatial frequency LIPSS (HSFL) on the surface of nickel is revealed by changing the scanning speed and the laser fluence. The experimental results show the proportion of HSFL area in the overall LIPSS (i.e., K) presents a quasi-parabola function trend with the polarization orientation under a femtosecond (fs) laser single-pulse train. Moreover, an obvious fluctuation dependence of K on the pulse delay is observed under a fs laser dual-pulse train. The peak value of the fluctuation is found to be determined by the polarization orientation of the dual-pulse train.

We report a simple, cost-effective and repeatable method for fabricating a large area and uniform substrate for surface-enhanced Raman scattering (SERS). The silicon, micromachined by a femtosecond laser, is coated with gold film and then treated through the dewetting process. The morphology shows a higher electric field enhancement due to light trapping. The enhancement factor of the SERS substrate is 9.2×107 with a 5 nm-thick film coated. Moreover, it also exhibits a uniform signal through Raman mapping and chemical stability with the greatest intensity deviation of 6% after a month. The proposed technique provides an opportunity to equip microchips with the SERS capabilities of high sensitivity, chemical stability, and homogeneous signals.