当前, 光电子器件正朝着微型化和集成化方向发展, 而传统的光电子器件通常基于硅晶片技术或者波导技术, 这就使得芯片需要通过波导模式转换器才能与光纤尾纤进行耦合，因此发展与光纤系统兼容的光电子器件具有重要的现实意义。“光纤实验室” 技术的发展，推动了低维材料与光纤的结合, 促进了光子芯片在光纤上的集成与发展, 有助于开发新一代小型化、集成化、轻量级、低成本、多功能的全光纤光子集成平台。根据光与物质相互作用方式的不同, 光纤集成光电探测器可分为沿波导方向集成和光纤端面集成两种类型。本综述主要回顾了近年来这两类光纤集成光电探测器的制备方法和研究进展, 并对利用光纤作为光电子器件的集成平台的未来发展进行了展望。

Recently, there has been substantial interest in the large-scale synthesis of hierarchically architectured transition metal dichalcogenides and designing electrodes for energy conversion and storage applications such as electrocatalysis, rechargeable batteries, and supercapacitors. Here we report a novel hybrid laser-assisted micro/nanopatterning and sulfurization method for rapid manufacturing of hierarchically architectured molybdenum disulfide (MoS2) layers directly on molybdenum sheets. This laser surface structuring not only provides the ability to design specific micro/nanostructured patterns but also significantly enhances the crystal growth kinetics. Micro and nanoscale characterization methods are employed to study the morphological, structural, and atomistic characteristics of the formed crystals at various laser processing and crystal growth conditions. To compare the performance characteristics of the laser-structured and unstructured samples, Li-ion battery cells are fabricated and their energy storage capacity is measured. The hierarchically architectured MoS2 crystals show higher performance with specific capacities of about 10 mAh cm-2, at a current rate of 0.1 mA cm-2. This rapid laser patterning and growth of 2D materials directly on conductive sheets may enable the future large-scale and roll-to-roll manufacturing of energy and sensing devices.

Raman spectroscopy-based temperature sensing usually tracks the change of Raman wavenumber, linewidth and intensity, and has found very broad applications in characterizing the energy and charge transport in nanomaterials over the last decade. The temperature coefficients of these Raman properties are highly material-dependent, and are subjected to local optical scattering influence. As a result, Raman-based temperature sensing usually suffers quite large uncertainties and has low sensitivity. Here, a novel method based on dual resonance Raman phenomenon is developed to precisely measure the absolute temperature rise of nanomaterial (nm WS2 film in this work) from 170 to 470 K. A 532 nm laser (2.33 eV photon energy) is used to conduct the Raman experiment. Its photon energy is very close to the excitonic transition energy of WS2 at temperatures close to room temperature. A parameter, termed resonance Raman ratio (R3) Ω = IA1g/IE2g is introduced to combine the temperature effects on resonance Raman scattering for the A1g and E2g modes. Ω has a change of more than two orders of magnitude from 177 to 477 K, and such change is independent of film thickness and local optical scattering. It is shown that when Ω is varied by 1%, the temperature probing sensitivity is 0.42 K and 1.16 K at low and high temperatures, respectively. Based on Ω, the in-plane thermal conductivity (k) of a ～25 nm-thick suspended WS2 film is measured using our energy transport state-resolved Raman (ET-Raman). k is found decreasing from 50.0 to 20.0 Wm-1 K-1 when temperature increases from 170 to 470 K. This agrees with previous experimental and theoretical results and the measurement data using our FET-Raman. The R3 technique provides a very robust and high-sensitivity method for temperature probing of nanomaterials and will have broad applications in nanoscale thermal transport characterization, non-destructive evaluation, and manufacturing monitoring.