过渡金属硫族化合物（TMD）薄层仅改变几何形状（如层厚）就可调节带隙、电子亲和势和费米能级，使器件设计更灵活。但因缺乏费米能级排列信息，TMD同质/异质结器件常因未知的能带弯曲而偏离预期。利用扫描开尔文探针显微镜（SKPM）表征了TMD同质/异质结，结果显示，MoS₂和MoTe₂同质结的费米能级随层厚增加向本征费米能级移动（背景掺杂浓度降低），而MoTe₂/MoS₂异质结中探测到宽耗尽区和强光响应，同时给出表面污染（分子尺度）对单层TMD表面电势的影响。上述发现将在器件设计中帮助精准堆叠范德华（vdW）层。

Two-dimensional transition metal dichalcogenides (TMDs) have intriguing physic properties and offer an exciting platform to explore many features that are important for future devices. In this work, we synthesized monolayer WS₂ as an example to study the optical response with hydrostatic pressure. The Raman results show a continuous tuning of the lattice vibrations that is induced by hydrostatic pressure. We further demonstrate an efficient pressure-induced change of the band structure and carrier dynamics via transient absorption measurements. We found that two time constants can be attributed to the capture process of two kinds of defect states, with the pressure increasing from 0.55 GPa to 2.91 GPa, both of capture processes were accelerated, and there is an inflection point within the pressure range of 1.56 GPa to 1.89 GPa. Our findings provide valuable information for the design of future optoelectronic devices.

Achieving valley pseudospin with large polarization is crucial in the implementation of quantum information applications. Transition metal dichalcogenides (TMDC) with different phase structures provide an ideal platform for valley modulation. The valley splitting has been achieved in hybrid phase WSe₂, while its valley polarization remains unstudied. Magnetic field controllable valley polarization is explored in WSe₂ with coexistence of H and T phases by an all-optical route. A record high valley polarization of 58.3% is acquired with a 19.9% T phase concentration under a 4-T magnetic field and nonresonant excitation. The enhanced valley polarization is dependent on the phase component and shows various increasing slopes, owing to the synergy between the T phase WSe₂ and the magnetic field. The magnetic field controlled local magnetic momentums are revealed as the mechanism for the large valley polarization in H / T-WSe₂. This speculation is also verified by theoretical simulations of the nonequilibrium spin density. These results display a considerable valley magnetic response in phase-engineered TMDC and provide a large-scale scheme for valley polarization applications.

The emerging two-dimensional materials, particularly transition metal dichalcogenides (TMDs), are known to exhibit valley degree of freedom with long valley lifetime, which hold great promises in the implementation of valleytronic devices. Especially, light–valley interactions have attracted attentions in these systems, as the electrical generation of valley magnetization can be readily achieved — a rather different route toward magnetoelectric (ME) effect as compared to that from conventional electron spins. However, so far, the moiré patterns constructed with twisted bilayer TMDs remain largely unexplored in regard of their valley spin polarizations, even though the symmetry might be distinct from the AB stacked bilayer TMDs. Here, we study the valley Hall effect (VHE) in 40°-twisted chemical vapor deposition (CVD) grown WS₂ moiré transistors, using optical Kerr rotation measurements at 20 K. We observe a clear gate tunable spatial distribution of the valley carrier imbalance induced by the VHE when a current is exerted in the system.The emerging two-dimensional materials, particularly transition metal dichalcogenides (TMDs), are known to exhibit valley degree of freedom with long valley lifetime, which hold great promises in the implementation of valleytronic devices. Especially, light–valley interactions have attracted attentions in these systems, as the electrical generation of valley magnetization can be readily achieved — a rather different route toward magnetoelectric (ME) effect as compared to that from conventional electron spins. However, so far, the moiré patterns constructed with twisted bilayer TMDs remain largely unexplored in regard of their valley spin polarizations, even though the symmetry might be distinct from the AB stacked bilayer TMDs. Here, we study the valley Hall effect (VHE) in 40°-twisted chemical vapor deposition (CVD) grown WS₂ moiré transistors, using optical Kerr rotation measurements at 20 K. We observe a clear gate tunable spatial distribution of the valley carrier imbalance induced by the VHE when a current is exerted in the system.

针对目前低维材料转移方案中过程复杂和衬底适应性差的难题，提出了一种常温常压下基于柔性聚合物薄膜聚二甲基硅氧烷（polydimethylsiloxane, PDMS）的低维材料定点转移方法。PDMS柔性膜的受力形变是实现其与不同衬底紧密贴合的基础，针对不同的目标衬底，仅需要更换对应的衬底微调系统盖板，结合三维位移机械系统，即可实现一维和二维材料的通用定点转移。该方法避免了转移过程中的真空吸附及衬底加热等严格条件，降低了材料的定点转移难度并提高了其稳定性和通用性。此外该方法也可实现低维材料同质结或其它垂直结构的构建，从而极大提高低维材料结构的丰富性。

The emergence of two dimensional (2D) materials has opened new possibilities for exhibiting second harmonic generation (SHG) at the nanoscale, due to their remarkable optical response related to stable excitons at room temperature. However, the ultimate atomic-scale interaction length with light makes the SHG of Transition Metal Dichalcogenides (TMDs) monolayers naturally weak. Here, we propose coupling a monolayer of TMDs with a photonic grating slab that works with doubly resonant bound states in the continuum (BIC). The BIC slabs are designed to exhibit a pair of BICs, resonant with both the fundamental wave (FW) and the second harmonic wave (SHW). Firstly, the spatial mode matching can be fulfilled by tilting FW's incident angle. We theoretically demonstrate that this strategy leads to more than four orders of magnitude enhancement of SHG efficiency than a sole monolayer of TMDs, under a pump light intensity of 0.1 GW/cm². Moreover, we demonstrate that patterning the TMDs monolayer can further enhance the spatial overlap coefficient, which leads to an extra three orders of magnitude enhancement of SHG efficiency. These results demonstrate remarkable possibilities for enhancing SHG with nonlinear 2D materials, opening many opportunities for chip-based light sources, nanolasers, imaging, and biochemical sensing. The emergence of two dimensional (2D) materials has opened new possibilities for exhibiting second harmonic generation (SHG) at the nanoscale, due to their remarkable optical response related to stable excitons at room temperature. However, the ultimate atomic-scale interaction length with light makes the SHG of Transition Metal Dichalcogenides (TMDs) monolayers naturally weak. Here, we propose coupling a monolayer of TMDs with a photonic grating slab that works with doubly resonant bound states in the continuum (BIC). The BIC slabs are designed to exhibit a pair of BICs, resonant with both the fundamental wave (FW) and the second harmonic wave (SHW). Firstly, the spatial mode matching can be fulfilled by tilting FW's incident angle. We theoretically demonstrate that this strategy leads to more than four orders of magnitude enhancement of SHG efficiency than a sole monolayer of TMDs, under a pump light intensity of 0.1 GW/cm². Moreover, we demonstrate that patterning the TMDs monolayer can further enhance the spatial overlap coefficient, which leads to an extra three orders of magnitude enhancement of SHG efficiency. These results demonstrate remarkable possibilities for enhancing SHG with nonlinear 2D materials, opening many opportunities for chip-based light sources, nanolasers, imaging, and biochemical sensing.