自支撑薄膜滤片是极紫外波段重要的透射式光学元件。为获得13.5 nm极紫外高透射率滤片，本文选用硅（Si）作为膜层材料，通过脉冲直流磁控溅射在可溶性衬底沉积厚度为50 nm的Si单层膜，并成功制备了自支撑Si薄膜滤片样品。利用X射线反射、扫描电镜、同步辐射装置等测试手段分别对样品膜厚、形貌以及光学性能进行了表征，结果表明，50 nm厚的Si滤片在13.5 nm处透射率达到86.02%。进一步通过检测样品组分，结合IMD软件计算并分析了滤片氧化程度，解释了其在12.5~20 nm波段理论透射率与测量值之间存在差异的原因。该研究成果将极大地拓宽此类高透射率Si滤片在极紫外光学工程领域的应用前景。

极紫外光刻曝光光学系统是极紫外光刻机的核心部件，其设计直接影响极紫外光刻机的性能。极紫外光刻机曝光系统的设计难度大、研究周期长，国外极紫外光刻机产品已经用于高端芯片的制造，但国外对中国禁运相关产品。国内极紫外光刻机曝光系统的设计和研发始于2002年。国内相关领域的研究主要聚焦在极紫外光刻机曝光光学系统的光学设计、像差检测、公差分析、热变形分析等。结合国内外极紫外光刻机曝光光学系统设计研究的历史和现状，较为系统地综述了极紫外光刻投影物镜和照明系统的设计研究与进展，包括：极紫外光刻机投影物镜系统及其设计方法、极紫外光刻照明系统及其设计方法、极紫外光刻曝光光学系统的公差分析、热变形及其对成像性能的影响研究，这为我国从事极紫外光刻机研制、曝光系统光学设计与加工的学者、工程师等提供了极紫外光刻机曝光系统设计研究的历史、现状和未来趋势的相关信息，助力我国极紫外光刻机的设计和研制。

This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.

In this review, we describe our research on the development of the 13.5 nm coherent microscope using high-order harmonics for the mask inspection of extreme ultraviolet (EUV) lithography. EUV lithography is a game-changing piece of technology for high-volume manufacturing of commercial semiconductors. Many top manufacturers apply EUV technology for fabricating the most critical layers of 7 nm chips. Fabrication and inspection of defect-free masks, however, still remain critical issues in EUV technology. Thus, in our pursuit for a resolution, we have developed the coherent EUV scatterometry microscope (CSM) system with a synchrotron radiation (SR) source to establish the actinic metrology, along with inspection algorithms. The intensity and phase images of patterned EUV masks were reconstructed from diffraction patterns using ptychography algorithms. To expedite the practical application of the CSM, we have also developed a standalone CSM, based on high-order harmonic generation, as an alternative to the SR-CSM. Since the application of a coherent 13.5 nm harmonic enabled the production of a high contrast diffraction pattern, diffraction patterns of sub-100 ns size defects in a 2D periodic pattern mask could be observed. Reconstruction of intensity and phase images from diffraction patterns were also performed for a periodic line-and-space structure, an aperiodic angle edge structure, as well as a cross pattern in an EUV mask.

介绍了东方超环(experimental advanced supereonducting tokamak, EAST)托卡马克上的两套快速极紫外(EUV)光谱仪系统波长的原位标定方法、 结果及其应用。 这两套谱仪均为掠入射平场谱仪, 时间分辨均为5 ms·frame-1。 两套谱仪分别工作在20～500和10～130 的波段范围, 由步进电机控制探测器在焦平面上移动实现整个观测波段上的波长扫描。 利用这两套谱仪系统观测极紫外波段光谱, 计算EAST中低-高Z杂质离子特征线辐射强度随时间的演化, 监测和研究等离子体中杂质的行为。 高Z杂质尤其是钨、 钼等金属元素, 发出的EUV波段光谱的构成非常复杂, 准确识谱对谱仪精确的波长测量能力以及谱分辨能力要求很高, 因此精确的波长标定是识别钨、 钼等高Z杂质谱线以及研究它们行为的最关键的技术之一。 利用EAST等离子体中类氢到类铍的低、 中Z杂质的特征谱线以及它们的二阶甚至三阶谱线, 结合谱仪系统的色散能力, 对这两套快速极紫外光谱仪的波长进行了精确的原位标定。 用于波长标定的杂质谱线有O Ⅷ 18.97 , O Ⅶ 21.60 , C Ⅵ 33.73 , Li Ⅲ 113.9 , Li Ⅲ 135.0 , Li Ⅱ 199.28 , Ar ⅩⅤ 221.15 , He Ⅱ 256.317 , He Ⅱ 303.78 , Ar ⅩⅥ 353.853 及C Ⅳ 384.174 等。 利用波长标定的结果对观测到的EUV光谱进行谱线识别, 两套谱仪观测到的绝大多数谱线波长与美国技术标准局(National Institute of Standards and Technology, NIST)数据库的标准波长相差分别小于0.08和0.03 。 开发了谱仪波长原位标定程序模块, 将这个模块内嵌到谱仪数据实时上传的交互式软件中, 实现了全谱数据以及特征谱线强度随时间演化数据的实时处理和上传。 同时利用开发的全谱分析交互式软件以及EAST上的数据查看软件, 最终实现了快速EUV谱仪自采数据的准实时分析、 读取和查看。