This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the transistor’s nonlinearity; more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects, such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.

随着抗干扰技术的不断发展和进步，以阻塞式和欺骗式干扰为代表的传统干扰技术面临挑战。为此，提出了一种基于低轨卫星的分布式超宽带电磁脉冲干扰技术，相比于传统干扰机，超宽带电磁脉冲干扰是一种新型电磁攻击体制。首先，理论推导了重频超宽带电磁脉冲的功率谱；其次，对分布式干扰技术可行性进行分析，并计算了基于低轨卫星平台的分布式干扰所需的发射功率；最后，开展了针对导航接收机低噪放的超宽带电磁脉冲效应实验，并利用STK(Satellite Tool Kit)设计了中低纬度下用于搭载超宽带电磁脉冲干扰机的低轨卫星星座布局。实验结果表明，UWB电磁脉冲可以使低噪声放大器出现暂时增益压缩现象，脉宽为0.7 ns的单脉冲可以使导航信号经过低噪声放大器后被压制近400 ns，重频形式下可以实现信号的完全压制。因此，基于低轨卫星的分布式超宽带电磁脉冲干扰体系可以有效增强干扰效果，有望实现目标区域的全覆盖。

基于70 nm InP HEMT工艺，设计了一款五级共源放大级联结构230~250 GHz低噪声太赫兹单片集成电路（TMIC）。该放大器采用扇形线和微带线构成栅极和源极直流偏置网络，用以隔离射频信号和直流偏置信号；基于噪声匹配技术设计了放大器的第一级和第二级，基于功率匹配技术设计了中间两级，最后一级重点完成输出匹配。在片测试结果表明，230~250 GHz频率范围内，低噪声放大器的小信号增益大于20 dB。采用Y因子法对封装后的低噪声放大器模块完成了噪声测试，频率为243~248 GHz时该MMIC放大器噪声系数优于7.5 dB，与HBT和CMOS工艺相比，基于HEMT工艺的低噪声放大器具有3 dB以上的噪声系数优势。

针对接收机射频前端在电磁脉冲环境作用下的电磁损伤过程模拟问题，以超短波接收机为具体研究对象，基于超外差式接收机电路功能模型，采用Verilog-a和SPICE网表联合建模方法，建立了射频前端低噪声放大器（LNA）电磁脉冲效应仿真模型(Extended LNA Model)，并通过S参数仿真和瞬态仿真验证了LNA电磁脉冲效应模型具备正常功能仿真能力；为验证该模型的电磁脉冲损伤模拟能力，以标准电磁脉冲波形作为激励，以偶极子天线作为简化的天线前门耦合通道，在不同强度电磁脉冲作用下，接收机中频电路信号输出表现出了无影响、干扰、损毁的电磁脉冲效应过程，说明了建模方法的有效性；最后以EMP-天线耦合电压峰值作为阈值指标，分析得到了超短波接收机不同电磁脉冲效应等级对应的电压峰值阈值数据。

设计了D波段直接检波式辐射计前端，主要包括D波段检波器模块、D波段低噪声放大器模块和D波段标准增益喇叭天线.基于商用零偏二极管HSCH-9161研制出D波段检波器，测试结果显示在D波段内，最高灵敏度接近1 600 mV/mW，当频率小于140 GHz时，灵敏度大于400 mV/mW，在大于140 GHz频段内，灵敏度优于120 mV/mW.基于自研D波段低噪声放大器芯片研制出D波段低噪放模块，测试结果显示最大增益为10.8 dB@139 GHz，在137~144 GHz频率范围内，增益大于7.8 dB，输入端回波损耗优于5 dB，输出端回波损耗优于8.5 dB.最终搭建D波段直接检波式辐射计前端进行成像实验验证.