Nonlinear silicon photonics has shown an ability to generate, manipulate, and detect optical signals on an ultracompact chip at a potential low cost. There are still barriers hindering its development due to essential material limitations. In this review, hybrid structures with some specific materials developed for nonlinear silicon photonics are discussed. The combination of silicon and the nonlinear materials takes advantage of both materials, which shows great potential to improve the performance and expand the applications for nonlinear silicon photonics.

A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due to the reverse-biased p-i-n diode are key in ensuring the high CE levels.

Strong nonlinearity of plasmonic metamaterials can be designed near their effective plasma frequency in the epsilon-near-zero (ENZ) regime. We explore the realization of an all-optical modulator based on the Au nonlinearity using an ENZ cavity formed by a few Au nanorods inside a Si photonic waveguide. The resulting modulator has robust performance with a modulation depth of about 30 dB/μm and loss less than 0.8 dB for switching energies below 600 fJ. The modulator provides a double advantage of high mode transmission and strong nonlinearity enhancement in the few-nanorod-based design.

We demonstrate significantly improved performance of a microwave true time delay line based on an integrated optical frequency comb source. The broadband micro-comb (over 100 nm wide) features a record low free spectral range (FSR) of 49 GHz, resulting in an unprecedented record high channel number (81 over the C band)—the highest number of channels for an integrated comb source used for microwave signal processing. We theoretically analyze the performance of a phased array antenna and show that this large channel count results in a high angular resolution and wide beam-steering tunable range. This demonstrates the feasibility of our approach as a competitive solution toward implementing integrated photonic true time delays in radar and communications systems.

We investigate frequency-comb generation in normal dispersion silicon microresonators from the near-infrared to mid-infrared wavelength range in the presence of multiphoton absorption and free-carrier effects. It is found that parametric oscillation is inhibited in the telecom wavelength range resulting from strong two-photon absorption. On the contrary, beyond the wavelength of 2200 nm, where three- and four-photon absorption are less detrimental, a comb can be generated with moderate pump power, or free-carriers are swept out by a positive-intrinsic-negative structure. In the temporal domain, the generated combs correspond to flat-top pulses, and the pulse duration can be easily controlled by varying the laser detuning. The reported comb generation process shows a high conversion efficiency compared with anomalous dispersion regime, which can guide and promote comb formation in materials with normal dispersion. As the comb spectra cover the mid-infrared wavelength range, they can find applications in comb-based radiofrequency photonic filters and mid-infrared spectroscopy.

Future quantum information networks operated on telecom channels require qubit transfer between different wavelengths while preserving quantum coherence and entanglement. Qubit transfer is a nonlinear optical process, but currently the types of atoms used for quantum information processing and storage are limited by the narrow bandwidth of upconversion available. Here we present the first experimental demonstration of broadband and high-efficiency quasi-phase matching second-harmonic generation (SHG) in a chip-scale periodically poled lithium niobate thin film. We achieve a large bandwidth of up to 2 THz for SHG by satisfying quasi-phase matching and group-velocity matching simultaneously. Furthermore, by changing the film thickness, the central wavelength of the quasi-phase matching SHG bandwidth can be modulated from 2.70 μm to 1.44 μm. The reconfigurable quasi-phase matching lithium niobate thin film provides a significant on-chip integrated platform for photonics and quantum optics.

We experimentally demonstrate the generation of highly coherent Type-II micro-combs based on a micro-resonator nested in a fiber cavity loop, known as the filter-driven four wave mixing (FD-FWM) laser scheme. In this system, the frequency spacing of the comb can be adjusted to integer multiples of the free-spectral range (FSR) of the nested micro-resonator by properly tuning the fiber cavity length. Sub-comb lines with single FSR spacing around the primary comb lines can be generated. Such a spectral emission is known as a “Type-II comb”. Our system achieves a fully coherent output. This behavior is verified by numerical simulations. This study represents an important step forward in controlling and manipulating the dynamics of an FD-FWM laser.

CMOS platforms with a high nonlinear figure of merit are highly sought after for high photonic quantum efficiencies, enabling functionalities not possible from purely linear effects and ease of integration with CMOS electronics. Silicon-based platforms have been prolific amongst the suite of advanced nonlinear optical signal processes demonstrated to date. These include crystalline silicon, amorphous silicon, Hydex glass, and stoichiometric silicon nitride. Residing between stoichiometric silicon nitride and amorphous silicon in composition, silicon-rich nitride films of various formulations have emerged recently as promising nonlinear platforms for high nonlinear figure of merit nonlinear optics. Silicon-rich nitride films are compositionally engineered to create bandgaps that are sufficiently large to eliminate two-photon absorption at telecommunications wavelengths while enabling much larger nonlinear waveguide parameters (5x–500x) than those in stoichiometric silicon nitride. This paper reviews recent developments in the field of nonlinear optics using silicon-rich nitride platforms, as well as the outlook and future opportunities in this burgeoning field.

In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 (GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at λ=1580 nm. We measured a waveguide nonlinear parameter of 7.0±0.7 W 1·m 1, which corresponds to a nonlinear refractive index of n2=(0.93±0.08)×10 18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA=(0.010±0.003) cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOMTPA=6.0±1.4 at λ=1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.