A Te-free binary phase change material SbBi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability (surface roughness <1 nm), low threshold power for crystallization (2 mW), and high etching selectivity (15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on SbBi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that SbBi is a promising laser heat-mode resist material for micro/nanostructure fabrication.

The ultrafast spin dynamic of in-plane magnetized Fe/Pt films was investigated by terahertz emission spectroscopy. The amplitude of the emitted terahertz wave is proportional to the intensity of the exciting laser beams. Both the amplitude and polarity of the terahertz wave can be adjusted by modifying the external magnetic field. The dependency of the amplitude on external magnetic fields is coincident to the hysteresis loops of the sample. Also, the polarity of the terahertz wave is reversed, as the magnetization orientation is reversed. The super-diffusive transient spin current with an inverse spin Hall effect is attributed to the main mechanism of the terahertz emission.

Future quantum information networks operated on telecom channels require qubit transfer between different wavelengths while preserving quantum coherence and entanglement. Qubit transfer is a nonlinear optical process, but currently the types of atoms used for quantum information processing and storage are limited by the narrow bandwidth of upconversion available. Here we present the first experimental demonstration of broadband and high-efficiency quasi-phase matching second-harmonic generation (SHG) in a chip-scale periodically poled lithium niobate thin film. We achieve a large bandwidth of up to 2 THz for SHG by satisfying quasi-phase matching and group-velocity matching simultaneously. Furthermore, by changing the film thickness, the central wavelength of the quasi-phase matching SHG bandwidth can be modulated from 2.70 μm to 1.44 μm. The reconfigurable quasi-phase matching lithium niobate thin film provides a significant on-chip integrated platform for photonics and quantum optics.

As perovskite solar cells show tremendous potential for widespread applications, we find that adding inorganic thermal-stable cesium ions into MAPbI3 results in significantly improves thermal stability. For un-encapsulated perovskite devices, the energy conversion efficiency maintains about 75% of its original value (over 15%) in the MA0.85Cs0.05PbI3 device under 80 min of heating at 140°C in a dry atmosphere (RH≤30%). With significantly improved thermal stability achieved by a convenient process, it is expected that this type of mixed-cation perovskites can further facilitate large scale applications.

In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of ～47 mA/cm2 at ?1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of ～97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 μm exhibit a 3 dB bandwidth of ～1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to ～32 GHz with mesa diameter of 10 μm. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics.

In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ～20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.

To reduce the cost and achieve high diffraction efficiency, a modified moiré technique for fabricating a large-aperture multi-level Fresnel membrane optic by a novel design of alignment marks is proposed. The modified moiré fringes vary more sensitively with the actual misalignment. Hence, the alignment accuracy is significantly improved. Using the proposed method, a 20 μm thick, four-level Fresnel diffractive polyimide membrane optic with a 200 mm diameter is made, which exhibits over 62% diffraction efficiency into the +1 order, and an efficiency root mean square of 0.051.

Light-induced transverse thermoelectric effect is investigated in incline-oriented Bi2Sr2Co2Oy thin films covered with a graphite light absorption layer. Upon the illumination of a 980 nm cw laser, an enhanced voltage signal is detected and the improvement degree is found to be dependent on the thickness of the graphite layer. A two-dimensional (2D) heat transport model using the finite-difference method provides a reasonable explanation to the experimental data. Present results give some valuable instructions for the design of light absorption layers in this type of detector.

Atomically thin MoS₂ films have attracted significant attention due to excellent electrical and optical properties. The development of device applications demands the production of large-area thin film which is still an obstacle. In this work we developed a facile method to directly grow large-area MoS₂ thin film on SiO₂ substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS₂ film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS₂ thin film shows carrier mobility up to 3.4 cm² V^?1 s^?1 and on/off ratio of 10⁵. The large-area atomically thin MoS₂ prepared in this work has the potential for wide optoelectronic and photonic device applications.