In this work, a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed. During the programming process, the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown, and the state is permanently preserved. The memory unit features a current ratio of more than 10³, a read voltage window of 6 V, a programming time of less than 10^?4 s, a stability of more than 10⁸ read cycles, and a lifetime of far more than 10 years. Besides, the fabrication of the device is fully compatible with commercial Si-based GaN process platforms, which is of great significance for the realization of low-cost read-only memory in all-GaN integration.

利用新颖的四端口平衡式二倍频原型，开发了215~230 GHz 频段的肖特基变容管倍频器，并具备更加优秀的变频效率和功率容量。同时，所提出的倍频架构能够实现奇次谐波和四次谐波的本征抑制，并且其中采用的二极管管结数量相对于传统平衡倍频结构提升了两倍。因此，这种四端口倍频电路可以实现更好的转换效率和双倍的功率处理能力。在室温下，当输入功率为196 ~ 340 mW 时，该倍频器具有约39.5% 的峰值转换效率（@218 GHz），即使在较高的频率下，该倍频器也被证明是高功率太赫兹波信号产生的理想解决方案。

利用n型有机半导体材料N2200掺杂在p型有机半导体材料PDVT‑10中形成捕获中心而能够表现出突触行为的特性，结合银金属作为源电极与有机半导体PDVT‑10接触形成的金属‑半导体结来引入肖特基势垒，从而使其限制有机突触器件的源漏电流，最终降低器件工作能耗。此外，器件表现出生物突触行为时的工作电流均在10^-10 A量级，如兴奋性突触后电流等基础的突触行为。研究方案为构建类脑水平的神经形态计算网络提供了一种简单高效的策略。

β-Ga₂O₃ Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga₂O₃ rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga₂O₃ Schottky diodes, together with the enabling thermal packaging solutions, are also presented.

Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.