研究了一种基于注入锁定技术的888 nm 半导体激光器(LD)泵浦的高功率单频可调谐1342 nm Nd:YVO₄激光器。采用最大输出功率20 mW分布式反馈单频半导体1342 nm激光器作为注入种子，利用lock-in (LI)技术，对LD端泵的Nd:YVO₄环形腔激光器进行种子注入，实现了单频可调谐激光输出。激光器最大平均输出功率为13.9 W，测量的线宽为41 MHz，调谐范围为1341.6774~1341.8025 nm。x轴和y轴的光束质量$ M^{2} $因子分别为$ M_x^2 $= 1.30和$ M_y^2 $= 1.23。实验结果表明：与先前文献报道的注入锁定1342 nm可调谐激光的结果相比，所需种子功率大幅减小，输出功率也有所提升。

A novel 1 kHz single-frequency, Q-switched Er-doped yttrium aluminum garnet (Er:YAG) laser pumped by a 1470 nm laser diode is demonstrated. The 500 ns, 5.52 mJ single-frequency, diffraction-limited pulses are obtained by using a ‘ramp-fire’ injection-seeding technique and an optical feedback architecture. The full width at half-maximum of the pulse spectrum is measured to be 1.47 MHz by using the heterodyne technique. The beam quality M² factors are measured to be 1.18 and 1.24 in the x and y directions, respectively.

The effects of gain compression on the modulation dynamics of an optically injected gain lever semiconductor laser are studied. Calculations reveal that the gain compression is not necessarily a drawback affecting the laser dynamics. With a practical injection strength, a high gain lever effect and a moderate compression value allow us to theoretically predict a modulation bandwidth four times higher than the free-running one without a gain lever, which is of paramount importance for the development of directly modulated broadband optical sources compatible with short-reach communication links.