Author Affiliations
Abstract
1 Photonics Research Center, the Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
2 Department of Electrical Engineering and Photonics Research Institute, the Hong Kong Polytechnic University, Hong Kong 999077, China
3 Institute of Photonics Technology, Jinan University, Guangzhou 510632, China
We report broadband all-fiber optical phase modulation based on the photo-thermal effect in a gas-filled hollow-core fiber. The phase modulation dynamics are studied by multi-physics simulation. A phase modulator is fabricated using a 5.6-cm-long anti-resonant hollow-core fiber with pure acetylene filling. It has a half-wave optical power of 289 mW at 100 kHz and an average insertion loss 0.6 dB over a broad wavelength range from 1450 to 1650 nm. The rise and fall time constants are 3.5 and 3.7 μs, respectively, 2–3 orders of magnitude better than the previously reported microfiber-based photo-thermal phase modulators. The gas-filled hollow-core waveguide configuration is promising for optical phase modulation from ultraviolet to mid-infrared which is challenging to achieve with solid optical fibers.
optical modulators photo-thermal effects hollow-core fibers 
Opto-Electronic Advances
2023, 6(5): 220085
作者单位
摘要
浙江大学光电科学与工程学院现代光学仪器国家重点实验室,浙江 杭州 310027
微纳光纤是一种直径接近或小于传输光真空波长的一维自由导波结构,通常由加热玻璃光纤在高温下通过物理拉伸方法制备。典型的微纳光纤具有表面光滑、直径均匀、力学性能优良、强光场约束、强倏逝场、表面场增强及直径/波长依赖的大波导色散等特性,而且光传输损耗远低于同等直径/线宽的所有其他形式的微纳光波导,在光学近场耦合、传感、原子光学、非线性光学及光纤激光技术、光力操控等领域具有良好的应用前景。本文基于微纳光纤的基本传输特性,介绍近年来本研究组在微纳光纤的精确制备、近场耦合、传感与非线性器件等方面的主要研究进展,同时简要提及国内外其他研究组同期相关工作,最后对该方向的研究进行简要总结与展望。
光纤光学 微纳光纤 精确制备 近场耦合 传感器 光调制器 光纤激光器 
光学学报
2022, 42(17): 1706001
作者单位
摘要
清华大学 电子工程系/北京信息科学与技术国家研究中心, 北京 100084
超宽带光电子芯片是下一代无线通信、先进电子信息装备中光纤传输与信号处理的关键元器件, 芯片中光子、电子、电磁场之间的相互作用是决定芯片性能的核心因素。文章通过介绍超宽带光电探测器芯片、电光调制器芯片等方面的研究进展, 分享课题组在破解上述核心科学问题、提高芯片性能的关键技术方案。
光电子芯片 光探测器 电光调制器 optoelectronic devices photodetectors optical modulators 
半导体光电
2022, 43(1): 56
Author Affiliations
Abstract
Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
As one of the greatest inventions in the 20th century, ultrafast lasers have offered new opportunities in the areas of basic scientific research and industrial manufacturing. Optical modulators are of great importance in ultrafast lasers, which directly affect the output laser performances. Over the past decades, significant efforts have been made in the development of compact, controllable, repeatable, as well as integratable optical modulators (i.e., saturable absorbers). In this paper, we review the fundamentals of the most widely studied saturable absorbers, including semiconductor saturable absorber mirrors and low-dimensional nanomaterials. Then, different fabrication technologies for saturable absorbers and their ultrafast laser applications in a wide wavelength range are illustrated. Furthermore, challenges and perspectives for the future development of saturable absorbers are discussed and presented. The development of ultrafast lasers together with the continuous exploration of reliable saturable absorbers will open up new directions for the mass production of the next-generation optoelectronic devices.
SESAMs low-dimensional materials nonlinear optical properties optical modulators ultrafast lasers 
Chinese Optics Letters
2021, 19(8): 081405
Author Affiliations
Abstract
State Key Laboratory of Optoelectronic Materials and Technologies and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510000, China
Integrated traveling-wave lithium niobate modulators need relatively large device lengths to achieve low drive voltage. To increase modulation efficiency within a compact footprint, we report an integrated Fabry–Perot-type electro-optic thin film lithium niobate on insulator modulator comprising a phase modulation region sandwiched between two distributed Bragg reflectors. The device exhibits low optical loss and a high tuning efficiency of 15.7 pm/V. We also confirm the modulator’s high-speed modulation performance by non-return-to-zero modulation with a data rate up to 56 Gbit/s.
integrated optic devices lithium niobate optical modulators microstructure fabrication 
Chinese Optics Letters
2021, 19(6): 060003
作者单位
摘要
Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027, China
dynamic control effective mode index (neff ) electro-absorption (EA) effect electro-refraction (ER) effect graphene Mach-Zehnder interferometer (MZI) optical modulators 
Frontiers of Optoelectronics
2014, 7(3): 277–292
作者单位
摘要
1 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
2 Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA
3 Tyndall National Institute, Lee Maltings, Photonics Building, Cork, Ireland
4 Photonics and Microwave Engineering Royal Institute of Technology Kista, Stockholm S-164 40, Sweden
electroabsorption effect Ge optical interconnections optical modulators quantum-confined Stark effect (QCSE) Ge/SiGe quantum wells (QWs) 
Frontiers of Optoelectronics
2012, 5(1): 82

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