1 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室，吉林 长春 130033
2 苏州长光华芯光电技术股份有限公司，江苏 苏州 215163
报道了基于半导体碟片激光倍频实现的高功率青色（蓝绿光）激光，连续输出功率可达到4.8 W。通过半导体碟片热管理优化和金刚石热沉预金属化，获得了最大功率为22.5 W、光-光转换效率为42.7%的980 nm基频光输出。通过V型腔LBO（LiB3O5）晶体倍频实现了4.8 W 490 nm激光输出，总的光-光转换效率为15.4%，单位泵浦面积产生的蓝绿光光强为3.8 kW/cm2。
激光器 半导体碟片激光器 封装工艺 光泵浦 腔内倍频 中国激光
2023, 50(23): 2301004
Author Affiliations
Abstract
1 College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China
2 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
3 Faculty of Sciences, Beijing University of Technology, Beijing 100124, China
4 National Center for Applied Mathematics, Chongqing Normal University, Chongqing 401331, China
The high peak power of picosecond pulses produced by a self-mode-locked semiconductor disk laser can effectively improve the efficiency of nonlinear frequency conversion. This paper presents the intracavity frequency tripling in a self-mode-locked semiconductor disk laser, and a picosecond pulse train at 327 nm wavelength is achieved. The pulse repetition rate is 0.49 GHz, and the pulse width is 5.0 ps. The obtained maximum ultraviolet output power under mode locking is 30.5 mW, and the corresponding conversion efficiency is obviously larger than that of continuous-wave operation. These ultraviolet picosecond pulses have high spatial and temporal resolution and can be applied in some emerging fields.
third-harmonic generation self-mode locking semiconductor disk laser ultraviolet Chinese Optics Letters
2023, 21(5): 051404
Author Affiliations
Abstract
1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Changchun University of Science and Technology, Changchun 130021, China
4 TRUMPF GmbH + Co. KG, Ditzingen 71254, Germany
We report a wavelength-tunable multi-point pump scheme of the semiconductor disk lasers (SDLs). By designing an external cavity of SDL with an intra-cavity transmission grating, multiple pump gain regions share the same resonator. The effect of the intra-cavity grating on the output laser power, wavelength, and beam quality was investigated. The emission wavelength could be tuned over a bandwidth of . With multi-point pumping, we achieve the laser output power with almost no loss, and further improvement is limited by the thermal effect. The changes in the beam are due to the mode selectivity by the intra-cavity grating.
semiconductor disk laser wavelength tuning transmission grating multi-point pump Chinese Optics Letters
2023, 21(2): 021401
1 中国科学院光电研究院,北京 100094
2 中国科学院大学, 北京100049
3 洛阳电光设备研究所, 洛阳 471000
便携式防空系统 (MANPADs)、各类红外制导导弹等红外热寻的**是民用、军用飞机重要的威胁。随着红外成像探测器被广泛用于热寻的制导**,传统的红外干扰机、曳光弹难以形成有效对抗, 以红外波段激光作为光源的红外定向对抗(DIRCM)系统是目前对抗热寻的**的有效手段。文中回顾了目前有代表性的红外定向对抗系统, 分析阐述用于红外定向对抗系统中的激光器关键技术, 给出红外成像探器致眩区域计算方法, 并讨论展望红外对抗激光器技术的发展趋势。
红外定向对抗 便携式防空系统 光参量振荡 光泵半导体激光器 量子级联激光器 direct IR countermeasure man-portable air defense system optical parametric oscillation optically-pumped semiconductor disk laser quantum-cascade laser 红外与激光工程
2018, 47(11): 1105009
Author Affiliations
Abstract
State Key Lab of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.
semiconductor disk laser GaSb based 2 μm wavelength Opto-Electronic Advances
2018, 1(2): 170003
1 重庆大学 光电技术及系统教育部重点实验室,重庆400030
2 重庆师范大学 物理与电子工程学院,重庆401331
3 重庆市高校光学工程重点实验室,重庆401331
基于垂直外腔面发射半导体激光器窗口散热模式的传热模型，用有限元法计算了不同条件下量子阱有源区的温度变化，建立了量子阱最高温度的等效热阻模型和计算公式，并通过拟合确定了热阻模型的相关参数.计算表明量子阱最高温度与抽运功率存在线性关系，与光斑面积近反比关系，窗口散热片可显著降低量子阱有源区温度和温度的不均匀度.等效热阻模型表明由于半导体晶片内热流在径向难以扩散，热传导中存在较大串联热阻，使得散热片热扩散能力趋于饱和，其中碳化硅的散热性能约为金刚石的75%.
半导体薄片激光器 热效应 热阻 散热片 semiconductor disk laser thermal effects thermal resistance heatspreader
