随着光纤激光器输出功率不断提高，高功率激光光纤的制备在工艺上要求更大尺寸的芯棒和对稀土掺杂光纤预制棒折射率分布更精确的控制。然而，多数现有的稀土掺杂石英光纤预制棒制备工艺是在通信光纤制备工艺的基础上发展而来的，其局限性逐步显现，因而迫切需要发展新工艺来制备高功率激光光纤预制棒。对一些制备稀土掺杂石英光纤预制棒的新工艺进行了介绍，并详细讨论了各工艺的优缺点。

Bi-doped SiO2–Al2O3–GeO2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi0 and Bi+ species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser.

采用改进化学汽相沉积(MCVD)与溶液掺杂结合的方法探讨了掺铋石英光纤预制棒的制备工艺,研制了具有红外宽带发光特性的掺铋SiO2-Al2O3-GeO2光纤。研究了不同掺锗浓度与氧气浓度条件下制备的预制棒的光谱特性。掺铋预制棒切片在532 nm和808 nm光激发下，产生中心波长为1146 nm,半峰全宽为204 nm与中心波长为1281 nm,半峰全宽为250 nm的近红外发光。拉制的光纤在808 nm光激发下,产生了中心波长为1265 nm,半峰全宽为280 nm的近红外发光；在976 nm光激发下，观察到光纤产生中心波长为1125 nm，半峰全宽为460 nm的超宽带近红外发光。光纤与预制棒的发光存在明显差异。通过控制预制棒制备工艺可以使铋掺杂光纤的发光满足实用的需要。