分析了金刚石线锯多线切割150 mm SiC晶片的表面形貌及质量, 通过测试SiC片Si面和C面的表面粗糙度(Ra), 发现C面Ra值约为Si面的2倍。在切割过程中晶片向Si面弯曲, 使锯丝侧向磨粒对Si面磨削修整作用更强, 从而使晶片Si面更加光滑。此外, 通过显微截面法测试了SiC晶片两面的损伤层深度。结果表明, Si面损伤层深度约为789 μm, 明显低于C面的138 μm, 显微镜下观察到截面边缘更加平整。该方法进一步证明了多线切割时晶片向Si面弯曲, 使锯丝侧向磨粒对Si面的磨削效果更强, 从而造成SiC晶片两面表面形貌和质量存在差异。

The surface morphology and quality of 150 mm SiC wafers cut by multi-wire diamond wire saw was analyzed. The surface roughness Ra of C-plane was about twice of the Si-plane by testing the surface roughness of both sides of SiC wafers, respectively. The Si-plane of wafer cut by lateral abrasive particles of multi-wire diamond wire saw was smoother with more grinding effect applied to this plane because of the wafer bending towards to the Si-plane. In addition, the damage layer depth on both sides of SiC wafer was measured by the bonded interface sectioning technique. The results show that the damage layer depth of the Si-plane is about 789 μm, significantly lower than 138 μm of the C-plane. Observed by microscope, the cross-section of Si-plane edge wafer is smoother. It is further proved that the grinding effect of lateral abrasive particles on the Si-plane is stronger due to the wafer bending, resulting in differences in surface morphology and quality on both sides of the SiC wafer.