碳化硅晶片表面质量差异影响因素研究

樊元东; 李晖; 王英民; 高鹏程; 王磊; 高飞

doi:doi:10.13911/j.cnki.1004-3365.230181

微电子学, 2023, 53 (3): 531, 网络出版: 2024-01-03

碳化硅晶片表面质量差异影响因素研究

Study on Factors Influencing Differences of Surface Quality of Silicon Carbide Wafers

论文大纲

樊元东李晖王英民高鹏程王磊高飞

作者单位

中国电子科技集团公司第四十六研究所, 天津 300220

SiC晶片表面损伤层表面粗糙度弯曲度 SiC wafer subsurface damage layer surface roughness Bow

摘要

分析了金刚石线锯多线切割150 mm SiC晶片的表面形貌及质量, 通过测试SiC片Si面和C面的表面粗糙度(Ra), 发现C面Ra值约为Si面的2倍。在切割过程中晶片向Si面弯曲, 使锯丝侧向磨粒对Si面磨削修整作用更强, 从而使晶片Si面更加光滑。此外, 通过显微截面法测试了SiC晶片两面的损伤层深度。结果表明, Si面损伤层深度约为789 μm, 明显低于C面的138 μm, 显微镜下观察到截面边缘更加平整。该方法进一步证明了多线切割时晶片向Si面弯曲, 使锯丝侧向磨粒对Si面的磨削效果更强, 从而造成SiC晶片两面表面形貌和质量存在差异。

Abstract

The surface morphology and quality of 150 mm SiC wafers cut by multi-wire diamond wire saw was analyzed. The surface roughness Ra of C-plane was about twice of the Si-plane by testing the surface roughness of both sides of SiC wafers, respectively. The Si-plane of wafer cut by lateral abrasive particles of multi-wire diamond wire saw was smoother with more grinding effect applied to this plane because of the wafer bending towards to the Si-plane. In addition, the damage layer depth on both sides of SiC wafer was measured by the bonded interface sectioning technique. The results show that the damage layer depth of the Si-plane is about 789 μm, significantly lower than 138 μm of the C-plane. Observed by microscope, the cross-section of Si-plane edge wafer is smoother. It is further proved that the grinding effect of lateral abrasive particles on the Si-plane is stronger due to the wafer bending, resulting in differences in surface morphology and quality on both sides of the SiC wafer.

参考文献

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樊元东, 李晖, 王英民, 高鹏程, 王磊, 高飞. 碳化硅晶片表面质量差异影响因素研究[J]. 微电子学, 2023, 53(3): 531. FAN Yuandong, LI Hui, WANG Yingming, GAO Pengcheng, WANG Lei, GAO Fei. Study on Factors Influencing Differences of Surface Quality of Silicon Carbide Wafers[J]. Microelectronics, 2023, 53(3): 531.

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