本文使用气相输运沉积的方式制备了硒化锑(Sb2Se3)薄膜太阳电池, 并采用氯化铯(CsCl2)溶液对器件上界面进行处理, 同时对薄膜和器件进行了一系列表征。研究发现, CsCl2溶液的背接触处理不仅可以提高器件的载流子收集以及降低上界面复合, 还可以优化薄膜的结晶性、表面粗糙度和光电性能。基于FTO/CdS/Sb2Se3/CsCl2/Au的器件结构, 得到了转换效率为6.32%的高效Sb2Se3薄膜太阳电池, 比基础器件效率提升了12%。本文的工作对Sb2Se3薄膜太阳电池未来的研究有一定的指导作用, 其他同类型半导体光伏器件也可借鉴。

Antimony selenide (Sb2Se3) thin film solar cells were prepared by vapor transport deposition, and cesium chloride (CsCl2) solution was used to treat the upper interface of the device. Meanwhile, a series of characterizations of the thin film and the device were also performed. The study shows that the back contact treatment of CsCl2 solution can not only improve the carrier collection and reduce upper interface recombination of the device, but also optimize the crystallinity, surface roughness and optoelectronic performance of thin film. Based on the device structure of FTO/CdS/Sb2Se3/CsCl2/Au, a high-efficiency Sb2Se3 thin film solar cell with efficiency of 6.32% are obtained, which is 12% higher than that of the basic device. The research may provide some guidance to further development of Sb2Se3 thin film solar cells and other similar types of semiconductor photovoltaic devices.