结合理论求解、仿真分析与实验验证，确定了影响脉冲变压器型触发器输出前沿的主要因素，并研制了一台能可靠触发真空沿面闪络开关导通的快前沿固态触发器。研究结果表明：影响触发器输出脉冲前沿的关键因素为脉冲变压器漏感、匝数比和半导体开关开通速度；不同绕制方式的脉冲变压器漏感差异很大，最小漏感绕法的变压器漏感值低1个数量级；选用开通速度优于15 ns的碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）、绕制低漏感（小于0.5 μH）的脉冲变压器，实现了前沿为20.4 ns（10%～90%）、幅值为16.5 kV的快前沿输出；控制SiC MOSFET的驱动脉宽在35～55 ns变化可以控制触发电流峰值在35～55 A范围内变化。

Using fast-rise-time high voltage pulse to trigger the switch is an important method to realize its low jitter operation. Combined with theoretical analysis, simulation results and experimental data, the main factors affecting the output pulse rise time of the pulse-transformer-based trigger source are investigated and a fast-rise-time solid-state trigger pulse generator is developed. Research results in this paper indicate that the key factors affecting the output pulse rise time are the leakage inductance of the pulse transformer, the turn-on speed of the semiconductor switch, and the pulse transformer turn ratio. A huge difference is observed in leakage inductance for different winding types. Among three winding types, the maximum leakage inductance is one order of magnitude greater than the minimum one. By selecting SiC MOSFET with a turn-on time less than 15 ns and using pulse transformer with low leakage inductance (<0.5 μH), a 20.4 ns (10%～90%) fast rise time and 16.5 kV output voltage can be achieved. By controlling the SiC MOSFET drive signal pulse width from 35-55 ns, the peak trigger current can vary from 35 to 55 A. The developed fast-rise-time solid-state trigger pulse generator can reliably trigger the vacuum surface flashover switch.