阻变存储器是一种新型非易失性存储器，其在外加电场作用下可实现高阻态和低阻态之间的切换。存储器电极材料和活性层材料的选择及相互作用是实现器件阻变特性的主要因素。石墨烯是具有优良导电性和高延展性的二维材料，通过激光加工还原氧化石墨烯是高效获取石墨烯的极佳方法。传统存储器的制备过程复杂，不利于大规模加工制造。以金属金（Au）和还原氧化石墨烯（rGO）作为电极，氧化石墨烯（GO）作为阻变层进行器件制备，很好地实现了存储器的阻变功能。简单高效的制备方式为大规模、高集成化生产阻变存储器提供了参考。

Resistive memory devices are new type of non-volatile memory devices that can be switched between high resistance state (HRS) and low resistance state (LRS) under the action of an external electric field. The selection and interaction of electrode materials and active layer materials are the main factors for realizing the resistive switching characteristics of devices. Graphene is a two-dimensional (2D) material with excellent electrical conductivity and high ductility. Reduction of graphene oxide (GO) by laser processing is an excellent method to obtain graphene efficiently. The preparation process of traditional memory devices is complicated, which is not conducive to large-scale processing and manufacturing. Using metal Au and reduced graphene oxide (rGO) as electrodes, and GO as the active layer for device fabrication, the resistive switching function of the memory device is well realized. The simple and efficient fabrication method provides a reference for the large-scale and highly integrated production of resistive memory devices.