为了提高半导体检测用深紫外激光器的检测效率，需要搭建高功率、高重频257 nm深紫外皮秒激光器实验平台。本文以光子晶体光纤放大器和腔外四倍频结构为基础，进行了257 nm深紫外激光器的实验研究。种子源采用中心波长为1030 nm、脉冲宽度为50 ps的光纤激光器，输出功率为20 mW，重复频率为19.8 MHz。通过两级掺镱双包层（65 μm/275 μm）光子晶体光纤棒放大结构，获得了1030 nm高功率基频光。利用二倍频晶体LBO、四倍频晶体BBO，采用腔外倍频方式获得了257 nm深紫外激光。种子源通过两级光子晶体光纤放大器输出的1030 nm基频光，输出功率为86 W，经过激光聚焦系统后，倍频得到二次谐波515 nm激光输出功率为47.5 W，四次谐波257 nm深紫外激光输出功率为5.2 W，四次谐波转换效率为6.05%。实验结果表明，该结构可获得高功率257 nm深紫外激光输出，为提高半导体检测用激光器的检测效率提供了新思路。

To improve the detection efficiency of deep ultraviolet laser for semiconductor detection, it is necessary to develop 257 nm deep ultraviolet picosecond laser with high power and high repetition frequency. In this study, a 257 nm deep ultraviolet laser was experimentally investigated based on photonic fiber amplifier and extra-cavity frequency quadrupling. The seed source uses a fiber laser with a central wavelength of 1030 nm and a pulse width of 50 ps, delivering a power output of 20 mW and a repetition frequency of 19.8 MHz. High power 1030 nm fundamental frequency light was obtained through a two-stage ytterbium-doped double cladding (65 μm/275 μm) photonic crystal fiber rod amplification structure, and 257 nm deep ultraviolet laser was generated using double frequency crystal LBO and quadruple frequency crystal BBO. The seed source uses a two-stage photonic crystal fiber amplifier to get a 1030 nm laser with output power of 86 W. After the laser focusing system and frequency doubling, a second harmonic output power of 47.5 W at 515 nm and a fourth harmonic output power of 5.2 W at 257 nm were obtained.The fourth harmonic conversion efficiency was 6.05%. The experimental results show that this structure can obtain high power 257 nm deep ultraviolet laser output, providing a novel approach to improve the detection efficiency of the lasers for semiconductor detection.