当前蓝宝石各向异性刻蚀规律还没有获得完整揭示, 其刻蚀微结构演化过程和形貌结构很难实现准确预测和控制, 给蓝宝石衬底图案化结构加工成型和质量控制带来很大的挑战。本研究基于蓝宝石全晶面刻蚀速率实验数据, 详细分析了其微结构刻蚀成型过程和刻蚀机理, 并对比分析了刻蚀条件对蓝宝石刻蚀微结构和表面形貌的影响规律, 实验结果表明: 适当提高刻蚀温度可以提高刻蚀效率, 但会引起表面质量的下降; 以磷酸为代表的弱电解质类作为刻蚀缓冲剂能够有效提高刻蚀结构面质量; (275±10) ℃, 98%H2SO4∶85%H3PO4(体积配比)=3∶1刻蚀溶液可以获得最优的刻蚀速率和表面质量。

Due to the fact that the current mechanism of anisotropic wet etching of sapphire has not been fully revealed, it is difficult to accurately predict and control the evolution process and morphology of its etching microstructure, which brings great challenges to the processing and quality control of patterned structures on sapphire substrates. In this paper, based on the experimental data of sapphire crystal plane etching rates, the etching process and etching mechanism of its microstructure were analyzed in detail, and the influence of the change of etching conditions on the sapphire etching microstructure and surface morphology was compared and analyzed. The experimental results show that: the etching efficiency can be improved by appropriately increasing the etching temperature, but the surface quality will be reduced; weak electrolytes represented by phosphoric acid can be used as etching buffers to improve the quality of etched structural surfaces; the (275±10) ℃, 98%H2SO4∶85%H3PO4 (volume ratio)=3∶1 is the optimal etching solution, which can obtain the best etching rate and surface quality.