针对SEMI标准对12寸(约300 mm)薄晶圆标识的要求, 采用1 066 nm光纤激光晶圆标识系统对裸硅晶圆与镀膜晶圆进行激光标识工艺的研究。通过控制变量法改变激光器的功率百分比, 分别在两种晶圆上标记Dot样式的SEMI字体, 并对标识的质量和识读率进行评估。研究发现, 裸硅晶圆标识从无到有, 甚至到严重溅射对应的激光功率范围是11.77~19.25 W, 镀膜后的硅晶圆对应的功率范围是4.40~11.77 W。在裸硅晶圆上标识的Dot形貌更符合SEMI标准要求。镀膜后的晶圆熔融阈值变小, 但是工艺窗口变窄, 标识字符和条码Dot圆度较差, 飞溅不易控制。两种晶圆OCR的识读率差异不大。

In this paper, according to the requirements of SEMI standard for 12-inch wafer marking, the 1066 nm fiber laser wafer marking system was used to study the laser marking process of the bare silicon wafer and the coated wafer. The power percentage of the laser was changed by the control variable method. Dot-style SEMI fonts were marked on the wafers, and the quality and readability of the marks were evaluated. The study found that the laser power range corresponding to the bare silicon wafer mark from scratch to severe sputtering is 11.77~19.25 W, and the power range corresponding to the coated silicon wafer is 4.40~11.77 W. The Dot morphology is more in line with the SEMI standard requirements. The melting threshold of the coated wafer become smaller, but the processing window become narrower, the roundness of the marking characters and barcode Dot are poor, and the spatter is not easy to control. The OCR reading rates of the two wafers are basically same.