红外LED用GaAs单晶的垂直梯度凝固制备研究
[1] 马英俊, 林 泉, 于洪国, 等. 红外LED用掺硅HB-GaAs单晶纵向载流子浓度分布研究[J]. 人工晶体学报, 2020, 49(8): 1555-1561.
[3] BIANKA S, MARTIN B. Biometric protection for mobile devices is now more reliable: research award for the development of an infrared LED for reliable iris recognition in smartphones and tablets[J]. Optik & Photonik, 2016, 11(1): 16-19.
[4] 兰天平. B2O3质量对VGF晶体生长工艺成晶率的影响[J]. 天津科技, 2020, 47(2): 25-27.
[5] 王 义. 硼扩散源及其在半导体器件中的应用[J]. 微电子学, 1977, 7(2): 44-50.
[6] 高欢欢, 黎建明, 冯德伸, 等. <100>P型4英寸无位错锗单晶的研制[J]. 稀有金属, 2018, 42(3): 285-290.
[7] CHARNIY L A, MOROZOV A N, BUBLIK V T, et al. Study of microdefects and their distribution in dislocation-free Si-doped HB GaAs by X-ray diffuse scattering on triple-crystal diffractometer[J]. Journal of Crystal Growth, 1992, 118(1/2): 163-175.
[8] 边义午. 3英寸VGF法GaAs单晶生长过程中固液界面的研究[D]. 北京: 北京有色金属研究总院, 2017.
[9] 邓志杰, 郑安生. 半导体材料[M]. 北京: 化学工业出版社, 2004.
[10] RUDOLPH P. Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry[J]. Materials Science and Engineering: A, 2005, 400/401: 170-174.
[11] PODKOPAEV O I, ARTEMYEV V V, SMIRNOV A D, et al. Multiphysical simulation analysis of the dislocation structure in germanium single crystals[J]. Technical Physics, 2016, 61(9): 1286-1291.
[12] 金 敏, 徐家跃, 谈惠祖, 等. 水平定向凝固法合成砷化镓多晶[J]. 上海应用技术学院学报(自然科学版), 2014, 14(3): 187-190.
[13] 徐学敏, 李希云, 崔仙航. 采用双层石英管道减少工艺中的沾污[J]. 半导体技术, 1983, 8(4): 47-48.
[14] 金太权. 测定石英玻璃的导热系数[J]. 吉林工学院学报, 1991, 12(1): 39-42.
[15] 赵鹏达, 赵惠忠, 张德强, 等. 莫来石轻质球形料结构与性能[J]. 人工晶体学报, 2017, 46(11): 2154-2158.
[16] BAEUMLER M, BRNER F, KRETZER U, et al. Spatial variations of carrier and defect concentration in VGF GaAs∶Si[J]. Journal of Materials Science: Materials in Electronics, 2008, 19(1): 165-170.
[17] 林 泉, 马英俊,于洪国, 等. 掺硫LEC-GaP单晶载流子的分布[J]. 河北大学学报(自然科学版), 2019, 39(4): 347-352.
[18] 张廷慧. 工艺参数对直拉掺锑锗单晶电阻率轴向均匀性的影响[D]. 北京: 北京有色金属研究总院, 2018.
路淑娟, 陈蓓曦, 张路, 曹波, 张云博, 马志永, 齐兴旺, 于洪国. 红外LED用GaAs单晶的垂直梯度凝固制备研究[J]. 人工晶体学报, 2023, 52(2): 235. LU Shujuan, CHEN Beixi, ZHANG Lu, CAO Bo, ZHANG Yunbo, MA Zhiyong, QI Xingwang, YU Hongguo. Prepration of GaAs Single Crystal for Infrared LED by Vertical Gradient Freeze Technology[J]. Journal of Synthetic Crystals, 2023, 52(2): 235.