氮化镓(GaN)是第三代半导体的典型代表,受到学术界和产业界的广泛关注,正在成为未来超越摩尔定律所依靠的重要技术之一。对于射频(RF)GaN技术,在电信和**两大主要应用增长行业,尤其是军用领域对先进雷达和通信系统不断增加的需求,推动了RF GaN器件向更高频率、更大功率和更高可靠性发展。文章梳理了在该领域中GaN RF/微波HEMT、毫米波晶体管和单片微波集成电路(MMIC)、GaN器件空间应用可靠性和抗辐射加固等技术发展的脉络。在功率电子方面,对高效、绿色和智能化能源的需求拉动GaN功率电子、电源变换器向快速充电、高效和小型化方向发展。简述了应用于纯电动与混合动力电动汽车(EV/HEV)、工业制造、电信基础设施等场合的GaN功率器件的研发进展和商用情况。在数字计算特别是量子计算前沿,GaN是具有应用前景的技术之一。介绍了GaN计算和低温电子技术研究的几个亮点。总而言之,对GaN技术发展几大领域发展的最新趋势作了概括性描述,勾画出技术发展的粗略线条。

Gallium nitride (GaN) is a typical representative of the third generation of semiconductors, which has received wide attention from academia and industry, and is becoming one of the key technologies relied upon to surpass Moore's law in the future. In terms of radio frequency (RF) GaN technology, the two major application-growing industries in telecom and national defense, especially the military sector's increasing demand for advanced radar and communication systems, has driven development of RF GaN devices to higher frequency, higher power and higher reliability. This paper described GaN RF/microwave HEMT, millimeter wave transistor and MMIC (monolithic microwave integrated circuit), the GaN devices space application reliability and radiation hardening and other technical development of the domain. In power electronics, the demand for efficient, green and intelligent energy pulled GaN power electronics, power converters to the directions of fast charging, high efficient and small size. This paper briefly described the commercial and development progress of GaN power devices applied to pure electric and hybrid electric vehicles (EV/HEV), industrial manufacturing, telecommunications infrastructure and other occasions. At the frontier of digital computing, especially quantum computing, GaN is one of the technologies with promising applications, so several highlights of GaN computing and cryogenic electronics research were presented. In summary, this paper gave a general description of the latest trends in several areas of GaN technology development, and sketched out the rough lines of technology development.