为了研究热电式MEMS微波功率传感器封装后的性能,提出了一种COB技术的封装方案。首先,采用有限元仿真软件HFSS仿真封装前后的微波特性;然后,基于GaAs MMIC技术对热电式MEMS微波功率传感器进行制备,并对制备好的芯片进行封装。最后,对封装前后传感器的微波特性及输出特性进行测试。实验结果表明,在8~12 GHz频率范围内,封装后回波损耗小于-10.50 dB,封装前的灵敏度为0.16 mV/mW@10 GHz,封装后的灵敏度为0.18 mV/mW@10 GHz。封装后的热电式微波功率传感器输出电压与输入功率仍有良好的线性度。该项研究对热电式MEMS微波功率传感器封装的研究具有一定的参考价值和指导意义。

In order to study the performance of the thermoelectric MEMS microwave power sensor after packaging, a package of COB technology was proposed. Firstly, the microwave characteristics before and after packaging were simulated by finite element simulation software HFSS. Then, the thermoelectric MEMS microwave power sensor was fabricated in a GaAs MMIC technology, and the prepared chip was packaged. Finally, the microwave characteristics and output characteristics of the sensor were measured before and after packaging. The measured results showed that the return loss after packaging was less than -10.50 dB in the frequency range of 8~12 GHz. The sensitivity before packaging was 0.16 mV/mW@10 GHz, and the sensitivity after packaging was 0.18 mV/mW@10 GHz. After the thermoelectric microwave power sensor was packaged, the output voltage still had a good linearity with the input power. Therefore, this work had certain reference value and guiding significance for the research on the packaging of thermoelectric MEMS microwave power sensors.