硫化锑（Sb₂S₃）薄膜具有n型和p型两种导电类型。利用wxAMPS对具有不同电子传输层和空穴传输层的Sb₂S₃同质结太阳电池进行了设计和缺陷分析。提出了由glass/FTO/ZnS/（n）Sb₂S₃/（p）Sb₂S₃/Spiro-OMeTAD/Au构成的器件结构。在Sb₂S₃同质结太阳电池中形成的内建电场增加了能带的弯曲程度，从而导致了开路电压的增加。（p）Sb₂S₃中缺陷对器件性能的影响比（n）Sb₂S₃中的缺陷对器件性能的影响更大，而在ZnS/（n）Sb₂S₃界面和（p）Sb₂S₃/Spiro-OMeTAD界面处的缺陷对器件性能有同样重要的影响。当（n）Sb₂S₃和（p）Sb₂S₃中的缺陷密度都为10¹⁵ cm^-3，且ZnS/（n）Sb₂S₃界面处和（p）Sb₂S₃/Spiro-OMeTAD界面处的缺陷密度都为10⁹ cm^-2时，太阳电池的效率能够达到23.96%。模拟结果表明，基于Sb₂S₃同质结的器件设计是实现高效太阳电池的有效结构。

Antimony sulfide (Sb₂S₃) thin films possess n-type and p-type conductivity. Design and defect analysis on promising light-harvesting material Sb₂S₃ homojunction solar cells with various electron transport layers and hole transport layers are performed by using wxAMPS. The device structure consisting of glass/FTO/ZnS/(n)Sb₂S₃/(p)Sb₂S₃/Spiro-OMeTAD/Au is proposed. In Sb₂S₃ homojunction solar cells, a built-in electric field is formed that increase the bending of the energy band and therefore leads to the increase of open-circuit voltage. Bulk defects in the (p)Sb₂S₃ have stronger impact on the device performance than that in the (n)Sb₂S₃, but defects at ZnS/(n)Sb₂S₃ interface and (p)Sb₂S₃/Spiro-OMeTAD interface have the same effects on device performance. When the bulk defect density in (n)Sb₂S₃ and (p)Sb₂S₃ is 10¹⁵ cm^-3, and the interface defect density at ZnS/(n)Sb₂S₃ interface and (p)Sb₂S₃/Spiro-OMeTAD interface is 10⁹ cm^-2, then the optimized conversion efficiency of the solar cells can reach 23.96%. Simulation results show that device design with Sb₂S₃ based homojunction is an effective structure to achieve highly efficient solar cells.