为探究不同铟(In)组分InxGa1-xN势垒对绿光激光二极管光电性能的影响，本文采用SiLENSe(simulator of light emitters based on nitride semiconductors)仿真软件对一系列具有不同In组分InxGa1-xN势垒的激光二极管进行研究，结果发现InxGa1-xN势垒中In组分最佳值为3%，此时结构的斜率效率最高，内部光学损耗最低，光学限制因子最大，性能最优。在具有In0.03Ga0.97N势垒的多量子阱结构基础上，设计了一种组分阶梯(composition step-graded， CSG)InGaN势垒多量子阱结构，提高了激光二极管的斜率效率和电光转换效率，增加了光场限制能力。仿真结果表明，当注入电流为120 mA时，具有CSG InGaN势垒的多量子阱结构，电光转换效率从17.7%提高至19.9%，斜率效率从1.09 mW/mA增加到1.14 mW/mA，光学限制因子从1.58%增加到1.62%。本文的研究为制备高功率GaN基绿光激光二极管提供了理论指导和数据支撑。

In order to investigate the influence of InxGa1-xN barrier with different indium (In) composition on photoelectric performance of green laser diode, a series of green laser diode with InxGa1-xN barrier of different In composition were simulated by SiLENSe (simulator of light emitters based on nitride semiconductors) software. The results show that the InxGa1-xN barrier structure with 3% In composition has the highest slope efficiency and the lowest internal optical loss, and also show the largest optical confinement factor and the optimum performance. Based on the multiple quantum well structure with In0.03Ga0.97N barrier, the composition step-graded (CSG) InGaN barrier model structure was designed, which effectively improves the slope efficiency and electro-optical conversion efficiency. Moreover, the optical field confinement increase. The simulation results show that at the injection current of 120 mA, the efficiency of electro-optical conversion increases from 17.7% to 19.9% for the multiple quantum well structure with CSG InGaN barrier, the slope efficiency increases from 1.09 mW/mA to 1.14 mW/mA, and the optical confinement factor increases from 1.58% to 1.62%. The study provides theoretical guidance and data support for the preparation of high-power GaN-based green laser diode.