碲锌镉(CdZnTe)晶体性能优越，是高性能碲镉汞(HgCdTe)外延薄膜的首选衬底材料。双面抛光是一种加工质量较高的碲锌镉晶片表面抛光方式，其具有效率高、平整度好、晶片应力堆积少的优点。但当碲锌镉晶片尺寸增大后，其加工难度也随之上升，易出现碎片多、加工速率慢、表面平整度差等问题。本文开展了大尺寸非规则碲锌镉晶片双面抛光技术研究，深入分析了面积大于50 cm2的非规则碲锌镉晶片双面抛光工艺中，不同参数对抛光质量的影响，通过模拟并优化晶片运动轨迹，优化抛光液磨粒粒型、抛光压力、抛光液流量等抛光工艺参数，实现了具有较高抛光速率和较好表面质量的大尺寸非规则碲锌镉晶片双面抛光加工，对进一步深入研究双面抛光技术有着重要意义。

Cadmium zinc telluride (CdZnTe) crystal has excellent performance and is the preferred substrate material for high-performance HgCdTe epitaxial films. Double sided polishing is a kind of surface polishing method for CdZnTe wafers, which has the advantages of high efficiency, good flatness and less stress accumulation in wafers. However, when the size of CdZnTe wafer increases, the processing difficulty also rises, and the problems such as many debris, slow processing speed and poor surface flatness are prone to occur. In this paper, the double sided polishing technology of irregular CdZnTe wafer with an area of more than 50 cm2was studied. The effects of different parameters on the polishing quality were simulated and optimized. The particle size of the polishing liquid, polishing pressure, and flow rate of the polishing liquid were optimized by simulating and optimizing the path of wafer. The double sided polishing process with high polishing speed and better surface quality is realized for large size irregular CdZnTe wafers, which is of great significance for further research on the double sided polishing technology.