激光与光电子学进展, 2023, 60 (1): 0102001, 网络出版: 2022-12-05  

CoSi16-和Co2Si322-团簇几何结构、电子和热力学特性研究 下载: 726次

Study on Geometric Structures and Electronic and Thermodynamic Properties of CoSi16- and Co2Si322- Clusters
作者单位
1 郑州师范学院物理与电子工程学院,河南 郑州 450044
2 郑州大学化工与能源学院,河南 郑州 450001
摘要
过渡金属原子掺杂硅团簇不仅可以提高硅团簇的稳定性,还可以使其产生许多新颖的物理和化学特性,在新能源和材料领域应用广泛。本文基于密度泛函理论并结合粒子群优化算法程序卡利普索,对CoSi16-和Co2Si322-团簇的几何结构、电子、光谱和热力学特性进行了系统研究。结构优化发现,CoSi16-和Co2Si322-团簇基态结构分别为Co原子被包裹在Si笼内部的高对称D2dD2h点群对称笼状结构。在此结构基础上,分析了两体系的磁性和键级等特性。此外,根据拟合的光电子能谱、红外和拉曼光谱,对两体系的主要特征峰进行了归属分析。最后,研究了体系的热力学特性,讨论了热力学参数CvS随温度变化的规律。
Abstract
Doping of silicon clusters with transition metals can enhance the stability of such clusters and confer many peculiar physical and chemical properties. Therefore, this method occupies an important position in the fields of new energy and materials science. Herein, we report the geometric structures as well as electronic and thermodynamic properties of CoSi16- and Co2Si322- clusters using the particle swarm optimization algorithm CALYPSO searching method and density functional theory. Results indicate that the lowest structures of the CoSi16- and Co2Si322- clusters exhibit the highly symmetric D2d and D2h point structures, respectively, in which the Co atom is completely encapsulated in Si cages. Based on these structures, various electronic properties, including the magnetic properties and bond order, are systemically evaluated. In addition, the photoelectron spectra, infrared spectra, and Raman spectra are recorded to identify the main characteristic peaks of the two systems. Finally, the thermodynamic properties of the two systems are investigated. Moreover, the temperature dependence of Cv and S for the CoSi16- and Co2Si322- clusters is discussed.

李家秀, 郭江水, 程琳, 郭梦姣, 王子昂, 李成刚, 崔颍琦. CoSi16-和Co2Si322-团簇几何结构、电子和热力学特性研究[J]. 激光与光电子学进展, 2023, 60(1): 0102001. Jiaxiu Li, Jiangshui Guo, Lin Cheng, Mengjiao Guo, Ziang Wang, Chenggang Li, Yingqi Cui. Study on Geometric Structures and Electronic and Thermodynamic Properties of CoSi16- and Co2Si322- Clusters[J]. Laser & Optoelectronics Progress, 2023, 60(1): 0102001.

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