对传统的静态刻蚀方法进行了改进,提出了一种光学元件兆声辅助化学刻蚀新方法,并对传统静态刻蚀与兆声辅助化学刻蚀效果进行了对比分析,综合考虑刻蚀液的配比、刻蚀时间、添加活性剂种类和功率对光学元件激光损伤阈值的影响,通过正交设计实验优选出最佳的兆声辅助化学刻蚀工艺参数。结果表明：兆声清洗对各类杂质的去除效果要明显好于手工擦洗,兆声辅助化学刻蚀比传统的静态刻蚀有更高的刻蚀速率,在兆声的作用下刻蚀液能够进入到传统静态刻蚀难以进入的微裂纹中,对微裂纹等缺陷的刻蚀效果更为明显,能够将熔石英元件激光损伤阈值进一步提高。

The traditional static etching method was improved, a new megasonic-assisted chemical etching method of optical components was proposed. The megasonic assisted chemical etching effects were compared with those of static etching. Considering the effects of the ratio of the etching solution, etching time, active agent types and megasonic power, the etching process parameters were optimized. The results showed that megasonics assisted chemical etching was better for all kinds of impurities removal than the manual scrubbing, and it had a higher etching rate than the traditional static etching, its etching liquid could enter into the micro-cracks, which was difficult for the traditional static etching, thus the etching effect was more obvious and laser damage threshold could be further improved.