[1] Gabor N M, Song J C W, Ma Q, et al. Hot carrier-assisted intrinsic photoresponse in graphene [J]. Science, 2011, 334(6056): 648-652.

[2] Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides [J]. Nature Nanotechnology, 2012, 7(11): 699-712.

[3] Tielrooij K J, Piatkowski L, Massicotte M, et al. Generation of photovoltage in graphene on a femtosecond timescale through efficient carrier heating [J]. Nature Nanotechnology, 2015, 10(5): 437-443.

[4] Ross R T, Nozik A J. Efficiency of hot-carrier solar energy converters [J]. Journal of Applied Physics, 1982, 53(5): 3813-3818.

[5] Nelson C A, Monahan N R, Zhu X Y. Exceeding the Shockley-Queisser limit in solar energy conversion [J]. Energy & Environmental Science, 2013, 6(12): 3508-3519.

[6] Mak K F, Lee C G, Hone J, et al. Atomically thin MoS2: A new direct-gap semiconductor [J]. Physical Review Letters, 2010, 105(13): 136805.

[7] He C, Zhu L P, Zhao Q Y, et al. Competition between free carriers and excitons mediated by defects observed in layered WSe2 crystal with time-resolved terahertz spectroscopy [J]. Advanced Optical Materials, 2018, 6(19): 1800290.

[8] Steinleitner P, Merkl P, Nagler P, et al. Direct observation of ultrafast exciton formation in a monolayer of WSe2 [J]. Nano Letters, 2017, 17(3): 1455-1460.

[9] Song J C W, Rudner M S, Marcus C M, et al. Hot carrier transport and photocurrent response in graphene [J]. Nano Letters, 2011, 11(11): 4688-4692.

[10] Chen Y Z, Li Y J, Zhao Y D, et al. Highly efficient hot electron harvesting from graphene before electron-hole thermalization [J]. Science Advances, 2019, 5(11): eaax9958.

[11] Huang H Q, Zhou S Y, Duan W H. Type-II Dirac fermions in the PtSe2 class of transition metal dichalcogenides [J]. Physical Review B, 2016, 94(12): 121117.

[12] Zhang K N, Yan M Z, Zhang H X, et al. Experimental evidence for type-II Dirac semimetal in PtSe2 [J]. Physical Review B, 2017, 96(12): 125102.

[13] Ciarrocchi A, Avsar A, Ovchinnikov D, et al. Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide [J]. Nature Communications, 2018, 9: 919.

[14] Shi J P, Huan Y H, Hong M, et al. Chemical vapor deposition grown large-scale atomically thin platinum diselenide with semimetal-semiconductor transition [J]. ACS Nano, 2019, 13(7): 8442-8451.

[15] Yang H, Schmidt M, Süss V, et al. Quantum oscillations in the type-II Dirac semi-metal candidate PtSe2 [J]. New Journal of Physics, 2018, 20(4): 043008.

[16] Hao K, Xu L X, Nagler P, et al. Coherent and incoherent coupling dynamics between neutral and charged excitons in monolayer MoSe2 [J]. Nano Letters, 2016, 16(8): 5109-5113.

[17] Zhao Y, Qiao J, Yu Z, et al. High-electron-mobility and air-stable 2D layered PtSe2 FETs [J]. Advanced Materials, 2017, 29(5): 1604230.

[18] Yu X C, Yu P, Wu D, et al. Atomically thin noble metal dichalcogenide: A broadband mid-infrared semiconductor [J]. Nature Communications, 2018, 9: 1545.

[19] Wang L, Zhang S F, McEvoy N, et al. Nonlinear optical signatures of the transition from semiconductor to semimetal in PtSe2 [J]. Laser & Photonics Reviews, 2019, 13(8): 1900052.[LinkOut]

[20] Zhao X, Liu F, Liu D Q, et al. Thickness-dependent ultrafast nonlinear absorption properties of PtSe2 films with both semiconducting and semimetallic phases [J]. Applied Physics Letters, 2019, 115(26): 263102.

[21] He J B, Zhu X D, Liu W M, et al. Versatile band structure and electron-phonon coupling in layered PtSe2 with strong interlayer interaction [J]. Nano Research, 2022, 15(7): 6613-6619.

[22] Qiu W T, Liang W Z, Guo J, et al. Thickness-dependent ultrafast hot carrier and phonon dynamics of PtSe2 films measured with femtosecond transient optical spectroscopy [J]. Journal of Physics D: Applied Physics, 2021, 54(7): 075102.

[23] Bae S, Nah S, Lee D, et al. Exciton-dominated ultrafast optical response in atomically thin PtSe2 [J]. Small, 2021, 17(45): e2103400.

[24] Wang P Z, He D W, Wang Y S, et al. Fast exciton diffusion in monolayer PtSe2 [J]. Laser & Photonics Reviews, 2022, 16(7): 2100594.

[25] Wang G Z, Wang K P, McEvoy N, et al. Ultrafast carrier dynamics and bandgap renormalization in layered PtSe2 [J]. Small, 2019, 15(34): 1902728.

[26] Shin H J, Bae S, Sim S. Ultrafast Auger process in few-layer PtSe2 [J]. Nanoscale, 2020, 12(43): 22185-22191.

[27] Fu J B, Xu W Q, Chen X, et al. Thickness-dependent ultrafast photocarrier dynamics in selenizing platinum thin films [J]. The Journal of Physical Chemistry C, 2020, 124(19): 10719-10726.

[28] Ulbricht R, Hendry E, Shan J, et al. Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy [J]. Reviews of Modern Physics, 2011, 83(2): 543-586.

[29] Docherty C J, Parkinson P, Joyce H J, et al. Ultrafast transient terahertz conductivity of monolayer MoS2 and WSe2 grown by chemical vapor deposition [J]. ACS Nano, 2014, 8(11): 11147-11153.

[30] Mihnev M T, Kadi F, Divin C J, et al. Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene [J]. Nature Communications, 2016, 7: 11617.

[31] Yang J, Jiang S L, Xie J F, et al. Identifying the intbgermediate free-carrier dynamics across the charge separation in monolayer MoS2/ReSe2 heterostructures [J]. ACS Nano, 2021, 15(10): 16760-16768.

[32] Jiang W, Wang X D, Chen Y, et al. Large-area high quality PtSe2 thin film with versatile polarity [J]. InfoMat, 2019, 1(2): 260-267.

[33] Wang Y L, Li L F, Yao W, et al. Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt [J]. Nano Letters, 2015, 15(6): 4013-4018.

[34] Ceballos F, Zhao H. Ultrafast laser spectroscopy of two-dimensional materials beyond graphene [J]. Advanced Functional Materials, 2017, 27(19): 1604509.

[35] George P A, Strait J, Dawlaty J, et al. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene [J]. Nano Letters, 2008, 8(12): 4248-4251.

[36] Jiang S L, Yang J, Zhu L, et al. Nonlinear electronic and ultrafast optical signatures in chemical vapor-deposited ultrathin PtS2 ribbons [J]. Nano Research, 2022, 15(5): 4366-4373.

[37] Cha S, Sung J H, Sim S, et al. 1s-intraexcitonic dynamics in monolayer MoS2 probed by ultrafast mid-infrared spectroscopy [J]. Nature Communications, 2016, 7: 10768.

[38] Cocker T L, Baillie D, Buruma M, et al. Microscopic origin of the Drude-Smith model [J]. Physical Review B, 2017, 96(20): 205439.

[39] AlMutairi A, Yin D M, Yoon Y. PtSe2 field-effect transistors: New opportunities for electronic devices [J]. IEEE Electron Device Letters, 2018, 39(1): 151-154.

[40] Cooke D G, MacDonald A N, Hryciw A, et al. Transient terahertz conductivity in photoexcited silicon nanocrystal films [J]. Physical Review B, 2006, 73(19): 193311.

[41] Sajjad M, Singh N, Schwingenschlgl U. Strongly bound excitons in monolayer PtS2 and PtSe2 [J]. Applied Physics Letters, 2018, 112(4): 043101.

[42] Xu S J, Yang J, Jiang H C, et al. Transient photoconductivity and free carrier dynamics in a monolayer WS2 probed by time resolved terahertz spectroscopy [J]. Nanotechnology, 2019, 30(26): 265706.

[43] Chen X, Zhang S F, Wang L, et al. Direct observation of interlayer coherent acoustic phonon dynamics in bilayer and few-layer PtSe2 [J]. Photonics Research, 2019, 7(12): 1416-1424.

[44] Pogna E A A, Jia X Y, Principi A, et al. Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons [J]. ACS Nano, 2021, 15(7): 11285-11295.