[1] 李进玺,程引会,周辉,等.屏蔽电缆对脉冲X射线响应的数值计算［J］.强激光与粒子束,2006,18(6): 981-984.(Li Jinxi, Cheng Yinhui, Zhou Hui, et al. Response of shielding cable to pulsed X-rays. High Power Laser and Particle Beams, 2006, 18(6): 981-984)

[2] 程引会,周辉,乔登江,等.带阻性负载细同轴电缆对电磁脉冲响应的有限差分算法［J］.强激光与粒子束,2005,17(2): 237-240.(Cheng Yinhui, Zhou Hui, Qiao Dengjiang, et al. FDTD algorithm for EMP response calculation on thin wire with resistance load. High Power Laser and Particle Beams,2005,17(2): 237-240)

[3] 李进玺,程引会,周辉,等.用传输线和时域有限差分法计算电缆X射线响应［J］.强激光与粒子束,2007,19(12): 2079-2082. (Li Jinxi, Cheng Yinhui, Zhou Hui, et al. Calculation of coaxial line X-ray responses by transmission line method and finite difference time domain method. High Power Laser and Particle Beams, 2007,19(12): 2079-2082)

[4] Higgins D F, Barbara S. Time-domain calculation of the leakage of SGEMP transients through braided cable shields［J］. IEEE Trans Nuclear Science, 1989,36(6): 2042-2049.

[5] Higgins D F, Barbara S. SGEMP leakage through satellite cable shields: the importance of transfer admittance coupling and its implications on testing［J］. IEEE Trans Nuclear Science, 1980,27(6): 1589-1595.

[6] 赵墨, 程引会, 吴伟, 等. 二极管负载电缆X射线辐照瞬态响应数值模拟［J］.强激光与粒子束, 2013, 25(2): 490-495. (Zhao Mo, Cheng Yinhui, Wu Wei, et al. Numerical simulation for calculating transient response of coaxial line with diode to pulsed X-ray. High Power Laser and Particle Beams, 2013,25(2): 490-495)

[7] 赵墨,胡淑玲,申胜平. 双极晶体管负载瞬态辐照毁伤效应［J］.强激光与粒子束,2014,26: 074002. ( Zhao Mo, Hu Shuling, Shen Shengping, et al. Transient radiation damage effect of bipolar transistor load. High Power Laser and Particle Beams, 2014.26: 074002)

[8] Arnborg T. Two-dimensional avalanche simulation of collector-emitter breakdown［J］. IEEE Trans Electron Devices, 1990, 37(9): 2099-2101.

[9] Connell R M, Shiue T, Hoft G R, et al. Numerical simulation of avalanche breakdown in PIN diodes and bipolar transistors［J］. Industry Applications Society Annual Meeting, 1992, 12(6): 1061-1065.

[10] Dobykin V D. Development of the theory for thermal damage of semiconductor structures by high-power electromagnetic radiation［J］. Journal of Communications Technology and Electronics, 2008, 53(1): 100-103.

[11] Dobykin V D, Kharchenko V V. Electromagnetic-pulse functional damage of semiconductor devices modeled using temperature gradients as boundary conditions［J］. Journal of Communications Technology and Electronics, 2006, 51(2): 231-239.

[12] 周怀安, 杜正伟, 龚克. 双极型晶体管在强电磁脉冲作用下的瞬态响应［J］. 强激光与粒子束,2005, 17(12): 1861-1864. (Zhou Huaian, Du Zhengwei, Gong Ke, et al. Transient response of bipolar junction transistor under intense electromagnetic pulse. High Power Laser and Particle Beams, 2005,17(12): 1861-1864.)

[13] 周怀安, 杜正伟, 龚克. 双极型晶体管损坏与强电磁脉冲注入位置的关系［J］. 强激光与粒子束, 2006, 18(4): 689-691. (Zhou Huaian, Du Zhengwei, Gong Ke, et al. Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode.High Power Laser and Particle Beams, 2005,17(12): 1861-1864)

[14] 陈曦, 杜正伟, 龚克. 外电路在电磁脉冲对双极型晶体管作用过程中的影响［J］.强激光与粒子束,2007, 19(7): 1197-1202. (Chen Xi, Du Zhengwei, Gong Ke, et al. Influence of circuit during injection of EMP into bipolar junction transistor. High Power Laser and Particle Beams, 2007,19(7): 1197-1202)

[15] Gummel H K. A self-consistent iterative scheme for one-dimensional steady state transistor calculations［J］. IEEE Trans Electron Devices,1964,11(1): 455-465.