本文设计了GaAs基1 060 nm高性能激光二极管的有源区结构, 通过在有源区中引入锑化物的应变补偿结构GaAsP/InGaAs/GaAsSb/InGaAsSb/GaAsP, 改变了有源区的能带结构, 解决了禁带宽度对发光波长的限制, 将弱Ⅱ型的量子阱能带结构变为Ⅰ型, 增大了电子空穴的波函数重叠, 提高了激光二极管跃迁概率和辐射复合概率及内量子效率, 降低了非辐射复合, 有效增强了器件输出功率和电光转换效率。同时, 设计了非对称异质双窄波导结构, p侧采用导带差大、价带差小的AlGaAs作为内、外波导层, 有利于价带空穴注入有源区且对导带中的电子形成良好的限制。n侧采用导带差小、价带差大的GaInAsP作为内、外波导层, 有利于导带电子的注入且对价带中的空穴形成更高的势垒。电子注入势垒和空穴注入势垒分别由原先的218、172 meV降低到148、155 meV, 提高了激光二极管的载流子注入效率; 电子泄漏势垒和空穴泄漏势垒分别由252、287 meV上升到289、310 meV, 增强了载流子限制能力。最后获得的激光二极管的输出功率和电光转换效率分别达到了6.27 W和85.39%, 为制备高性能GaAs基1 060 nm激光二极管提供了理论指导和数据支撑。

In this paper, an active region structure of GaAs-based 1 060 nm high performance laser diode was designed. An strain compensation structure of antimonide GaAsP/InGaAs/GaAsSb/InGaAsSb/GaAsP was introduced into the active region, which alter the energy band structure of active region and solve the limitation of bandgap width on emission wavelength. The weak type Ⅱ quantum well band structure is transformed into type Ⅰ, and the overlap of the electron and hole wave functions increase. The transition probability, radiation recombination probability and internal quantum efficiency are improved, and the non-radiative recombination is reduced. Therefore, output power and electro-optical conversion efficiency of the device are effectively enhanced. Additionally, an asymmetric hetero-double narrow waveguide structure was designed. The p-side of the structure used AlGaAs with large conduction band offset and small valence band offset as the inner and outer waveguide layers, which is beneficial for valence band holes injecting into the active region and restricted electrons in the conduction band. The n-side of the structure used GaInAsP with small conduction band offset and large valence band offset as the inner and outer waveguide layers, which is beneficial for conduction band electrons injecting into the active region and forming a higher potential barrier for holes in the valence band. The electrons injection barrier and holes injection barrier are reduced from 218 and 172 meV to 148 and 155 meV, respectively, which improve the carrier injection efficiency. The electron leakage barrier and hole leakage barrier are increased from 252 and 287 meV to 289 and 310 meV, respectively, which enhance carrier confined ability. Finally, output power and electro-optical conversion efficiency of laser diode reach 6.27 W and 85.39%, respectively. The results provide theoretical guidance and data support for achieving high-performance GaAs-based 1 060 nm laser diode.